High-speed metal-semiconductor-metal photodetectors on InP:Fe

Kühl, D.; Hieronymi, F.; Böttcher, E.H.; Bimberg, D.

doi:10.1109/68.58053

Cited by 15 publications

(3 citation statements)

References 8 publications

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“…13 The higher responsivity seen in the case of the MBE-grown detectors can be attributed to the much smaller contact finger spacing used in this case ͑0.2 m vs 5 m͒, since the responsivity for a photoconductive detector is inversely proportional to the square of the contact finger spacing. 18 As observed by others, 19 the value of the dc responsivity and quantum efficiency of the detector increases with increasing applied voltage as shown in Fig. 1.…”

supporting

confidence: 74%

High speed metal-semiconductor-metal photodetector manufactured on GaAs by low-temperature photoassisted metalorganic chemical vapor deposition

Boutros

Roberts

Bedair

et al. 1995

Applied Physics Letters

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We report on the photoassisted metalorganic chemical vapor deposition (MOCVD) of high resistivity gallium-arsenide at low-temperature (LT-GaAs). The as-grown GaAs exhibits a resistivity of ∼106 Ω cm and has been used as the active layer of a metal-semiconductor-metal (MSM) Schottky-barrier photodetector. The impulse response of the detector is 4 ps with a dark current of 4 nA at a bias of 2 V. These results are comparable to those obtained from LT-GaAs grown by molecular beam epitaxy (MBE).

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supporting

confidence: 74%

High speed metal-semiconductor-metal photodetector manufactured on GaAs by low-temperature photoassisted metalorganic chemical vapor deposition

Boutros

Roberts

Bedair

et al. 1995

Applied Physics Letters

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“…The frequency response of these devices, disregarding transit time effects, is calculated using the elements of an equivalent circuit representation under small signal conditions. The elements of the equivalent circuit are determined by a fit to the measured sll-parameters [16]. The sll-parameters are found to be independent of the bias level because of the low intrinsic carrier concentration.…”

Section: Device Structure and High Frequency Packagingmentioning

confidence: 99%

Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors

Kühl

Hieronymi

Böttcher

et al. 1992

J. Lightwave Technol.

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Abstruct-The impulse response of interdigitated metalsemiconductor-metal photodetectors fabricated on an Fe-doped InGaAs absorbing layer and an Fe-doped InP barrier enhancement layer is investigated. For ultra-short pulse excitation of 150 fs at .h = G 2 0 nm the photoresponse is found to be less than 13 ps FWHM for detectors with 1 pm finger spacing. Above a certain level of illumination, the peak amplitude increases sublinearly and the relative contribution of the tail to the detector response is appreciably enhanced. The screening of the electric field by photo-generated space charges is responsible for this nonlinearity. For detectors with 5 pm finger spacing illuminated with 1.3 pm light pulses (FWHM = 33 ps), space charge perturbation of the impulse response manifests itself by a decrease of the FWHM and an increase of the fall time with increasing illumination level. The practical consequences for the performance of MSM detectors in various applications are discussed.

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“…Semi-insulating, iron-doped InP (InP:Fe) is useful in photodetector applications because of its high resistance (low leakage current) and high mobility (fast response). 6,7) The photodetectors were fabricated by depositing Au (75 nm)/Ti (25 nm) metal contacts in a typical metalsemiconductor-metal (MSM) configuration onto h100i InP:Fe via sputtering, followed by a 380 C anneal for 1 min [Fig. 1(a)].…”

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confidence: 99%

Feasibility Study of Ion-Cut InP Photoconductor Devices on Glass Substrates

Chen

Zhang

Chen

et al. 2009

Appl. Phys. Express

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Photoconductive devices, prefabricated on semi-insulating InP, were integrated on glass substrates using hydrogen-induced layer transfer (ion-cut) combined with adhesive bonding. The prefabricated photodetectors were implanted through by hydrogen ions and transferred twice to achieve device-up configuration. The transferred devices exhibited both higher photocurrent and dark current when compared with bulk devices. Transient response measurement showed a long-lived tail that persisted after the initial ''fast'' response, indicative of trapmediated transport due to the implant-related localized states. Our study showed that the ion-cutting layer transfer process yielded functional photodetectors. The residual defects remain a challenging issue for the ion-cut process.

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High-speed metal-semiconductor-metal photodetectors on InP:Fe

Cited by 15 publications

References 8 publications

High speed metal-semiconductor-metal photodetector manufactured on GaAs by low-temperature photoassisted metalorganic chemical vapor deposition

High speed metal-semiconductor-metal photodetector manufactured on GaAs by low-temperature photoassisted metalorganic chemical vapor deposition

Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors

Feasibility Study of Ion-Cut InP Photoconductor Devices on Glass Substrates

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