High-speed modulation up to 10 Gbit/s with 1.55 µm wavelength InGaAlAs VCSELs

Ortsiefer, M.; Shau, R.; Mederer, F.; Michalzik, Rainer; Rosskopf, J.; Böhm, G.; Köhler, Fabian; Lauer, Christian; Maute, M.; Amann, M.-C.

doi:10.1049/el:20020819

Cited by 47 publications

(13 citation statements)

References 4 publications

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“…Several bonding wires from the chip to the driving circuitry were needed to reduce parasitic inductivity. With these optimizations transmission with low bit error rates could be demonstrated with bit rates up to 10 Gbit/s [3]. Figures 26 and 27 display eye diagrams and bit error rates [45].…”

Section: Small and Large Signal Modulation And Data Transmission Expementioning

confidence: 99%

“…These features significantly improve the VCSEL characteristics. At 1.55 µm wavelength, we demonstrated single-mode cw-output powers of 1.7 mW at room temperature [1], multi-mode cw-output powers of 7 mW [2], laser operation up to heat sink temperatures of 110 • C [2], and optical data transmission with 10 Gbit/s and low bit error rates [3]. These are record values to the best knowledge of the authors.Using strained quantum wells, the emission wavelength can be tailored to any value in the range between 1.3 µm and 2.0 µm [4], sample results are presented for the telecommunication wavelengths 1.3 µm and 1.55 µm, 1.8 µm, and the currently upper limit of 2.0 µm.…”

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confidence: 99%

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confidence: 99%

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InP‐based long‐wavelength vertical‐cavity surface‐emitting lasers with buried tunnel junction

Lauer

Ortsiefer

Shau

et al. 2004

phys. stat. sol. (c)

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PACS 42.55.Px, 42.62.Fi In this paper we present a device concept for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) in the InGaAlAs/InP material system incorporating a buried tunnel junction (BTJ). A major issue of long-wavelength VCSELs is the dissipation of heat because of the low thermal conductivity of ternary and quaternary alloys. With the BTJ-VCSEL, a significant reduction of the thermal resistance is achieved by the use of a hybrid backside mirror made of a stack of amorphous dielectrics with Au-coating and the monolithic integration of a heat sink. These provide improved heat sinking capability compared to a conventional epitaxial semiconductor DBR. In addition, the tunnel junction facilitates a substitution of most of the p-doped layers by n-doped material, reducing heat generation due to ohmic losses. These features significantly improve the VCSEL characteristics. At 1.55 µm wavelength, we demonstrated single-mode cw-output powers of 1.7 mW at room temperature [1], multi-mode cw-output powers of 7 mW [2], laser operation up to heat sink temperatures of 110• C [2], and optical data transmission with 10 Gbit/s and low bit error rates [3]. These are record values to the best knowledge of the authors.Using strained quantum wells, the emission wavelength can be tailored to any value in the range between 1.3 µm and 2.0 µm [4], sample results are presented for the telecommunication wavelengths 1.3 µm and 1.55 µm, 1.8 µm, and the currently upper limit of 2.0 µm. The slight wavelength tuning with driving current is brought about by the tiny volume of the devices and makes VCSELs ideal components for tunable diode laser absorption spectroscopy (TDLAS) [5,6]. The maximum detuning typically reaches 4 nm (=500 GHz).

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Section: Small and Large Signal Modulation And Data Transmission Expementioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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InP‐based long‐wavelength vertical‐cavity surface‐emitting lasers with buried tunnel junction

Lauer

Ortsiefer

Shau

et al. 2004

phys. stat. sol. (c)

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“…For example, current modulator-based links have been demonstrated for 40 Gbps operation and beyond [20]. In comparison, the highest modulation speed for VCSELs is still at 10GHz [18]. Another significant benefit of using MQW modulators can be derived from the stable optical power available from the external laser source.…”

Section: Design Issuesmentioning

confidence: 99%

“…While one of the disadvantages of VCSELs stems from the threshold current that consumes constant power, recent progress in in VCSEL technology, such as oxide-apertureconfined structure [18,10], has significantly reduced the threshold current to hundreds of micro-amps. Thus, for the on-board power dissipation, VCSEL based transmitters dissipate power comparable to MQW modulator based transmitters [10].…”

Section: Design Issuesmentioning

confidence: 99%

Exploring the Design Space of Power-Aware Opto-Electronic Networked Systems

Chen

Peh

Wei

et al.

11th International Symposium on High-Performance Computer Architecture

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As microprocessors become increasingly interconnected, the power consumed by the interconnection network can no longer be ignored. Moreover, with demand for link bandwidth increasing, optical links are replacing electrical links in inter-chassis and inter-board environments. As a result, the power dissipation of optical links is becoming as critical as their speed. In this paper, we first explore options for building high speed opto-electronic links and discuss the power characteristics of different link components. Then, we propose circuit and network mechanisms that can realize power-aware optical links -links whose power consumption can be tuned dynamically in response to changes in network traffic. Finally, we incorporate power-control policies along with the power characterization of link circuitry into a detailed network simulator to evaluate the performance cost and power savings of building power-aware opto-electronic networked systems. Simulation results show that more than 75% savings in power consumption can be achieved with the proposed power-aware opto-electronic network.

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Long‐wavelength (λ ≥ 1.3 µm) InGaAlAs–InP vertical‐cavity surface‐emitting lasers for applications in optical communication and sensing

Amann

Ortsiefer

2006

Physica Status Solidi (a)

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In this paper we present an overview of the properties and applications of long‐wavelength vertical‐cavity surface‐emitting lasers (VCSELs) based on the InGaAlAs–InP material system. With respect to significant temperature sensitivity of active material gain as well as insufficient thermal conductivity of InP‐based epitaxial compound layers, the effective thermal heat management appears as a major issue for application suitable device performance. In this context, the incorporation of a buried tunnel junction (BTJ) in connection with improved heat sinking resembles a breakthrough for long‐wavelength VCSELs. With the utilization of n‐type spreading layers and consequently ultralow series resistances, BTJ‐VCSELs exhibit sharply reduced excess heat generation. Furthermore, the BTJ‐approach enables self‐aligned optical and current confinement. A hybrid dielectric stack with Au‐coating yields an improved thermal heatsinking. The current status of BTJ‐VCSELs encompasses a number of superior performance values. At 1.55 µm wavelength, this includes room temperature single‐ and multimode continuous wave (cw) output powers of more than 3 mW and 10 mW, respectively, laser operation for heat sink temperatures well exceeding 100 °C, and optical data transmission rates up to 10 Gbit/s. The versatility of compound layer composition enables arbitrary emission wavelengths within a broad range of 1.3 and 2 µm. With respect to sensing applications, BTJ‐VCSELs appear as ideal components for optical detection of infrared active gases. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High-speed modulation up to 10 Gbit/s with 1.55 µm wavelength InGaAlAs VCSELs

Cited by 47 publications

References 4 publications

InP‐based long‐wavelength vertical‐cavity surface‐emitting lasers with buried tunnel junction

InP‐based long‐wavelength vertical‐cavity surface‐emitting lasers with buried tunnel junction

Exploring the Design Space of Power-Aware Opto-Electronic Networked Systems

Long‐wavelength (λ ≥ 1.3 µm) InGaAlAs–InP vertical‐cavity surface‐emitting lasers for applications in optical communication and sensing

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