High-Speed Proximity Effect Correction System for Electron-Beam Projection Lithography by Cluster Processing

Complementary exposure of 70 nm SoC devices in electron projection lithography

“…8,9 Note that the data volume does not increase after proximity effect correction with conventional flat data processing because the number of vertices does not increase, but their positions are shifted with the mask biasing ͑resizing͒ method. 1͒.…”

Proximity effect correction using blur map in electron projection lithography

“…Figure 1 shows the outline of our EPL mask data process-ing flow. 6 It then recalculates the area density map and iterates the above processes until correction accuracy satisfies a predetermined criterion. 5 First, the original pattern layout data is split into thousands of SFs.…”

Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography

“…As electron-projection lithography (EPL) uses a high accelerating voltage of 100 kV, a proximity effect is unavoidable. Shape modification (mask sizing) [4][5][6][7][8][9][10][11][12][13] and a ghost method [1][2][3][4] have been proposed for proximity effect correction (PEC) in EPL. Shape modification has advantages over the ghost method in that it provides a high contrast, and in that it does not require additional exposure.…”