High Speed Resistive Switching in Pt/TiO2/TiN Resistor for Multiple-Valued Memory Device

Yoshida, Chikako; Noshiro, Hideyuki; Iizuka, Takashi; Yamazaki, Yoichi; Kinoshita, K.; Aoki, Masaki; Sugiyama, Yoshihiro

doi:10.7567/ssdm.2006.p-4-14l

Cited by 4 publications

(1 citation statement)

References 2 publications

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“…Several methods were proposed to fabricate the binary oxide layer in the bipolar memory device [3]- [6]. This binary oxide layer can be formed by thermal oxidation of the bottom electrode, such as Cu [4] and TiN [5], which is highly compatible with modern CMOS manufacturing process. The memory devices with these binary oxides (CuO x and TiON) show low operation power and fast operation speed.…”

Section: Introductionmentioning

confidence: 99%

$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

Lee

Chen

et al. 2009

IEEE Electron Device Lett.

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A novel method of fabricating HfO x -based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10 5 cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfO x stacked layer in this letter shows promising application in the next generation of nonvolatile memory.Index Terms-AlCu, HfO x , resistive random access memory (RRAM), trap and detrap.

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