High-speed, waveguide Ge PIN photodiodes for a photonic BiCMOS process

Lischke, Stefan; Knoll, D.; Zimmermann, Lars; Scheit, A.; Mai, Christian; Trusch, A.; Voigt, K.; Kroh, M.; Kurps, R.; Ostrovskyy, P.; Yamamoto, Yuji; Korndörfer, F.; Pęczek, Anna; Winzer, G.; Tillack, Bernd

doi:10.1109/bctm.2014.6981279

Cited by 23 publications

(6 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The observed bias behavior (higher bandwidth with increased reverse bias) indicates as well that the bandwidth behavior (of both diodes) is not limited by transit times. An additional, but often neglected effect which can limit the bandwidth of photodiodes is photo carrier diffusion [13]. Assuming that diffusion is the bandwidth-limiting effect for the diodes under investigation and that the new diode structure leads to reduced diffusion length would qualitatively explain the improvement.…”

Section: Figure 5 Compares C-v and Dark I-v Curves Of Old And New Ge mentioning

confidence: 99%

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode

et al. 2015

View full text Add to dashboard Cite

A novel waveguide-coupled germanium p-i-n photodiode is demonstrated which combines high responsivity with very high -3 dB bandwidth at a medium dark current. Bandwidth values are 40 GHz at zero bias and more than 70 GHz at -1 V. Responsivity at 1.55 µm wavelength ranges from 0.84 A/W at zero bias to 1 A/W at -1 V. Room temperature dark current density at -1 V is about 1 A/cm2. The high responsivity mainly results from the use of a new, low-loss contact scheme, which moreover also reduces the negative effect of photo carrier diffusion on bandwidth.

show abstract

Section: Figure 5 Compares C-v and Dark I-v Curves Of Old And New Ge mentioning

confidence: 99%

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode

et al. 2015

View full text Add to dashboard Cite

show abstract

“…In ongoing works, drivers and TIAs matching to the NMD modulator properties are being developed. In the next step, the IHP technology offers the possibility to monolithically cointegrate driver electronics and photonics [7,8].…”

Section: Discussionmentioning

confidence: 99%

Silicon photonics interconnect based on ultra-small scalable components for multi-channel optical transceivers

Rhee

Al-Saadi

Kupijai

et al. 2015

2015 European Conference on Optical Communication (ECOC)

View full text Add to dashboard Cite

show abstract

“…Bandwidth improvement results from two measures which lower the impact of "slow" photo carrier diffusion. First, ECS Transactions, 75 (8) 121-139 (2016) lateral dimensions of doped Ge regions were reduced and second, non-doping implants were used for diffusion length manipulation (13). The first measure also reduces free carrier absorption contributing to the responsivity gain.…”

Section: Process Technologymentioning

confidence: 99%

(Invited) SiGe BiCMOS for Optoelectronics

Knoll¹,

Lischke²,

Awny³

et al. 2016

ECS Trans.

View full text Add to dashboard Cite

Silicon-based electronic-photonic integrated circuit (ePIC) technology enables a high degree of integration of optoelectronic subsystems for optical communications. In this paper we give an overview about IHP’s work in ePIC technology development under use of different SiGe BiCMOS baseline processes. Focus is on "Photonic BiCMOS", a new monolithic ePIC technology which combines high-performance BiCMOS technology with high-speed photonic devices for electronic-photonic submodules for next generation communication networks. Main features of this technology are described, including an overview of offered photonic and electronic devices. Examples of demonstrator circuits fabricated in the new technology are also presented. Another approach of merging photonics with electronics is hybrid assembly. In a second part of the paper we will demonstrate the potential of SiGe BiCMOS as the ‘electronics supplier’ for this approach.

show abstract

High-speed, waveguide Ge PIN photodiodes for a photonic BiCMOS process

Cited by 23 publications

References 10 publications

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode

Silicon photonics interconnect based on ultra-small scalable components for multi-channel optical transceivers

(Invited) SiGe BiCMOS for Optoelectronics

Contact Info

Product

Resources

About