High-Stable-Efficiency Tandem Thin-Film Silicon Solar Cell With Low-Refractive-Index Silicon-Oxide Interlayer

Boccard, Mathieu; Despeisse, M.; Escarré, Jordi; Niquille, X.; Bugnon, G.; Haenni, Simon; Bonnet-Eymard, Maximilien; Meillaud, Fanny; Ballif, Christophe

doi:10.1109/jphotov.2014.2357495

Cited by 57 publications

(36 citation statements)

References 40 publications

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“…In the in-house measurement, an initial efficiency of 13.1% (J sc = 13.1 mA=cm 2 , V oc = 1.302 V, FF = 0.766) and a stabilized efficiency of 12.7% (J sc = 12.9 mA=cm 2 , V oc = 1.330 V, FF = 0.744) after light soaking The relatively large difference found in J sc and FF between two measurements is probably caused by the spectral mismatch of the in-house solar simulator. This confirmed efficiency is slightly higher than the record efficiency of an a-Si:H=µc-Si:H tandem solar cell (stabilized efficiency of 12.63% measured by Newport Corporation) reported recently by Boccard et al 35) It is worth pointing out that our solar cell exhibits only 3% degradation in spite of the thick top-cell design. We attribute this to the improved a-Si:H absorber layer as well as the current-mismatch cell design.…”

Section: Double-junction Solar Cellssupporting

confidence: 66%

High-efficiency thin-film silicon solar cells realized by integrating stable a-Si:H absorbers into improved device design

Matsui

Maejima

Bidiville

et al. 2015

Jpn. J. Appl. Phys.

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We report that thin-film silicon solar cells exhibiting high stabilized efficiencies can be obtained by depositing hydrogenated amorphous silicon (a-Si:H) absorbers using triode-type plasma-enhanced chemical vapor deposition. The improved light-soaking stability and performance of solar cells are also realized by optimizing the device design, such as p and p-i buffer layers. As a result, we attain independently confirmed stabilized efficiencies of 10.1-10.2% for a-Si:H single-junction solar cells (absorber thickness: t i = 220-310 nm) and 12.69% for an a-Si:H (t i = 350 nm)/ hydrogenated microcrystalline silicon (µc-Si:H) tandem solar cell fabricated using textured SnO 2 and ZnO substrates, respectively. The relative efficiency degradations of these solar cells are >10 and 3%, respectively, under 1 sun illumination at 50°C for 1000 h.

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Section: Double-junction Solar Cellssupporting

confidence: 66%

High-efficiency thin-film silicon solar cells realized by integrating stable a-Si:H absorbers into improved device design

Matsui

Maejima

Bidiville

et al. 2015

Jpn. J. Appl. Phys.

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“…Note that these relatively thick films were analyzed instead of the more standard a-Si:H layer thicknesses of ~70-350 nm that are typically used in state-of-the-art TF Si single-junction [32,36,37], tandem [33,37,58], triple-junction [31,38], and quadruple-junction [35,39,59] solar cells. In this way, a clear plateau appears on the positron depth profile in the DB-PAS measurements which enables a more accurate determination of the Doppler S-W values of the film.…”

Section: A Sample Definitionsmentioning

confidence: 99%

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Melskens

Eijt

Schouten

et al. 2017

IEEE J. Photovoltaics

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“…Green et al [1]. Noteworthy benchmarks for the PCE for TF-Si technology for small area devices (aperture area approximately 1 cm 2 ) include a MICROMORPH ™ cell at 11.5% developed by TEL Solar-Lab SA [2], and tandem cells (a-Si:H/μc-Si:H) at 12.63% and 12.69% developed, respectively, by EPFL, Neuchâtel [3] and AIST, Tsukuba [4]. For large area modules (aperture area approximately 1.4 m 2 ), results include a 10.9% device developed by LG Electronics [5] based on a triple junction a-Si/a-SiGe/μc-Si device and recently a large area module (1.43 m 2 ) published by LG Electronics [6] at 11.2% (measured at LG) based on the same triple junction a-Si/a-SiGe/μc-Si device.…”

Section: Introductionmentioning

confidence: 99%

Record 12.34% stabilized conversion efficiency in a large area thin‐film silicon tandem (MICROMORPH™) module

Cashmore¹,

Apolloni²,

Braga³

et al. 2015

Progress in Photovoltaics

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Mass-adoption of thin-film silicon (TF-Si) photovoltaic modules as a renewable energy source can be viable if the cost of electricity production from the module is competitive with conventional energy solutions. Increased module performance (electrical power generated) is an approach to reduce this cost. Progress towards higher conversion efficiencies for 'champion' large area modules paves the way for mass-production module performance to follow. At TEL Solar AG, Trübbach, Switzerland, significant progress in the absolute stabilized module conversion efficiency has been achieved through optimized solar cell design that integrates high-quality amorphous and microcrystalline TF-Si-deposited materials with efficient light management and transparent conductive oxide layers in a tandem MICROMORPH ™ module. This letter reports a world record large area (1.43 m 2 ) stabilized module conversion efficiency of 12.34% certified by the European Solar Test Installation; an increase of more than 1.4% absolute compared with the previous record for a TF-Si triple junction large area module. This breakthrough result generates more than 13.2% stabilized efficiency from each equivalent 1 cm 2 of the active area of the full module.

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High-Stable-Efficiency Tandem Thin-Film Silicon Solar Cell With Low-Refractive-Index Silicon-Oxide Interlayer

Cited by 57 publications

References 40 publications

High-efficiency thin-film silicon solar cells realized by integrating stable a-Si:H absorbers into improved device design

High-efficiency thin-film silicon solar cells realized by integrating stable a-Si:H absorbers into improved device design

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Record 12.34% stabilized conversion efficiency in a large area thin‐film silicon tandem (MICROMORPH™) module

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