High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

Wietler, Tobias; Min, Byungsul; Reiter, Sina; Larionova, Yevgeniya; Reineke‐Koch, Rolf; Heinemeyer, Frank; Brendel, Rolf; Feldhoff, Armin; Krügener, Jan; Tetzlaff, D.; Peibst, Robby

doi:10.1109/jphotov.2018.2878337

Cited by 20 publications

(19 citation statements)

References 30 publications

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“…The TEM investigations presented in the next section will show that there are hints of Al diffusion in our samples as well. It is also good to note that in a similar study on sputtered ZnO:Al on poly-Si(n) passivating contacts, it was found that the contact resistivity increased strongly at an annealing temperature of 400 o C, which was attributed to the formation of 2-3 nm of SiO x at the TCO/poly-Si interface [73]. As TEM images will point out in the next section, in our case the interfacial oxide is only 1.1 nm after annealing at 400 o C but thickens upon annealing at 600 o C. Therefore it is well conceivable that this oxide contributes to the contact resistivity of especially the Al-doped films annealed at 500 o C.…”

Section: Contacting Of N-type Si Surfaces By Sio 2 /Zno(:al) Stacksmentioning

confidence: 80%

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Macco

Loo

Dielen

et al. 2021

Solar Energy Materials and Solar Cells

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Section: Contacting Of N-type Si Surfaces By Sio 2 /Zno(:al) Stacksmentioning

confidence: 80%

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Macco

Loo

Dielen

et al. 2021

Solar Energy Materials and Solar Cells

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“…The first one is to reduce front poly‐Si thickness to d poly < 10 nm. At that point, a TCO transport layer will be necessary to ensure good fill‐factor . Another possible solution is to change the front side structure with either amorphous silicon or a lightly doped homojunction front surface field with poly‐Si passivating contacts only underneath the contacts.…”

Section: Resultsmentioning

confidence: 99%

“…At that point, a TCO transport layer will be necessary to ensure good fill-factor. [74][75][76] Another possible solution is to change the front side structure with either amorphous silicon or a lightly doped homojunction front surface field with poly-Si passivating contacts only underneath the contacts. Figure 14 shows the EQE of SC3, a hybrid solar cell from, 39 and a PeRFeCT solar cell from.…”

Section: Solar Cellsmentioning

confidence: 99%

Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells

Limodio

Yang

Groot

et al. 2020

Progress in Photovoltaics

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In this work, we develop SiOx/poly‐Si carrier‐selective contacts grown by low‐pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly‐Si in a wide range (20‐250 nm). Dose and energy of implantation as well as temperature and time of annealing were optimized, achieving implied open‐circuit voltage well above 700 mV for electron‐selective contacts regardless the poly‐Si layer thickness. In case of hole‐selective contacts, the passivation quality decreases by thinning the poly‐Si layer. For both poly‐Si doping types, forming gas annealing helps to augment the passivation quality. The optimized doped poly‐Si layers are then implemented in c‐Si solar cells featuring SiO2/poly‐Si contacts with different polarities on both front and rear sides in a lean manufacturing process free from transparent conductive oxide (TCO). At cell level, open‐circuit voltage degrades when thinner p‐type poly‐Si layer is employed, while a consistent gain in short circuit current is measured when front poly‐Si thickness is thinned down from 250 to 35 nm (up to +4 mA/cm2). We circumvent this limitation by decoupling front and rear layer thickness obtaining, on one hand, reasonably high current (JSC‐EQE = 38.2 mA/cm2) and, on the other hand, relatively high VOC of approximately 690 mV. The best TCO‐free device using Ti‐seeded Cu‐plated front contact exhibits a fill factor of 75.2% and conversion efficiency of 19.6%.

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“…In addition to good absorptivity, high conductivity is the prerequisite for their applications in electro-optic devices. An effective method to achieve these properties is doping with metals, especially elements of group III (Al, Ga), which have been shown to substitute Zn or O in the ZnO structure to enable n-type doping [4][5][6][7][8][9][10]. Employing a physical deposition approach, Sun et al [11] studied (Al, Co)-ZnO films cosputtered on glass substrate to reveal that (Co, Al) doping affects the carrier mobility due to the reduce crystallinity in the deposited films.…”

Section: Introductionmentioning

confidence: 99%

Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

et al. 2021

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We unveiled the effect of doping on the morpho-structural and opto/electrical properties of Ca-doped ZnO:Al thin films obtained by RF magnetron sputtering. Scanning electron microscopy (SEM) was performed to reveal the surface morphology, while the composition and crystal structure were investigated by energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The correlation between the microstructure and the electrical conductivity identifies an increase in electrical conductivity up to 145 × 10−3 Ω−1·m−1 at 5 wt.% Ca doping level with the decrease in the grain size. Furthermore, the presence of Ca dopant triggers the occurrence of the emission peak at 430 nm and an increase of the green emission peak in PL spectra. Corroborating the electrical measurements with X-ray diffraction and optical measurements, one can infer that the electrical conductivity is dominated by intrinsic defects developed during deposition and by the existence of dopants.

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High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

Cited by 20 publications

References 30 publications

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells

Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

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