High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

Grella, K.; Dreiner, S.; Schmidt, Andrei; Heiermann, Wolfgang; Kappert, Holger; Vogt, H.; Paschen, Uwe

doi:10.4071/hitec-2012-wp15

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…At high temperatures, leakage currents, decreased threshold voltage, and the loss of DC gain in the implemented op-amps, lead to large errors in the output reference voltage of the bandgap. Measurement results of a regular bandgap reference up to 450 C were demonstrated in [14], where a nonlinear increase in the reference voltage above 250 C was recognized. A first-order bandgap reference is investigated in this paper with the use of RBB.…”

Section: B Bandgap Voltage Referencementioning

confidence: 94%

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Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing

Schmidt¹,

Kappert²,

Kokozinski³

2013

Journal of Microelectronics and Electronic Packaging

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AbstractÀAnalog circuits realized in a PD-SOI (partiallydepleted silicon-on-insulator) CMOS technology for a wide temperature range up to 4008C are significantly affected by the transistor characteristics at high temperatures. As leakage currents increase with temperature, the analog device performance, for example, intrinsic gain and bandwidth, tend to decrease. Both effects influence the precision of analog circuits and lead to malfunction of the circuitry at high temperatures. Enhancement of the MOSFET device performance and improved design techniques are required to handle these issues. In this paper, we demonstrate that RBB (reverse body biasing) is a useful method to improve the analog performance of PD-SOI transistors and also to push the limit of analog circuit design in SOI technology beyond 3008C. It allows beneficial FD (fully depleted) device characteristics in a 1.0 mm PD-SOI CMOS technology by manipulating the depletion condition of the silicon film. Due to reduced leakage currents, operation in the moderate inversion region of the SOI transistor device up to 4008C is feasible. The method is verified by experimental results of transistors with an H-shaped gate (HGATE), an analog switch, current mirrors, a two-stage operational amplifier, and a bandgap voltage reference. The normalized leakage current of HGATE devices at high temperatures can be reduced by more than one order of magnitude. Thereby, the g m /I d factor is improved significantly especially in the moderate inversion region, which has been inaccessible due to leakage currents. As a result, the intrinsic gain of HGATE transistors is improved. As the method has also been applied to essential analog circuits, it has been found that RBB significantly reduces the errors related to leakage currents and enables the operation of analog circuits in PD-SOI technology up to 4008C.

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Section: B Bandgap Voltage Referencementioning

confidence: 94%

“…The last bracket in eq. (14) represents the dependency on drain-source voltage V DS and can be neglected for V DS >> V t [10]. The subthreshold leakage current is mainly dependent on the body factor n and the threshold voltage V th and is thereby strongly dependent on temperature.…”

Section: Influence On Soi-mosfet Leakage Currentsmentioning

confidence: 99%

Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing

Schmidt¹,

Kappert²,

Kokozinski³

2013

Journal of Microelectronics and Electronic Packaging

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“…This is why a 1 mm complementary metal-oxide-semiconductor (CMOS) process was developed at the Fraunhofer Institute for Microelectronic Circuits and Systems (Fraunhofer IMS). This process can withstand temperatures up to 250 C, and with reduced performance even operate above this level [2]. This process is based on 200 mm silicon-on-insulator (SOI) wafers.…”

Section: Introductionmentioning

confidence: 99%

Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology

Grella¹,

Dreiner²,

Vogt³

et al. 2013

Journal of Microelectronics and Electronic Packaging

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AbstractÀIt is difficult to use standard bulk-CMOS-technology at temperatures higher than 1758C due to high pn-leakage currents. Silicon-on-insulator-technologies (SOI), on the other hand, are usable up to 2508C and even higher, because leakage currents can be reduced by two to three orders of magnitude. Nevertheless, performance and reliability of SOI devices are strongly affected at these high temperatures. One of the main critical factors is the gate oxide quality and its reliability. In this paper, we present a study of gate oxide capacitor time-dependent dielectric breakdown (TDDB) measurements at temperatures up to 3508C. The experiments were carried out on gate oxide capacitor structures realized in the Fraunhofer 1.0 mm SOI-CMOS process. The gate oxide thickness is 40 nm. Using the data of the TDDB measurements, the behavior of field and temperature acceleration parameters at temperatures up to 3508C was evaluated. For a more detailed investigation, the evolution of the current in time was also studied. An analysis of the oxide breakdown conditions, in particular the field and temperature dependence of the charge to breakdown and the current just before breakdown, completes the study. The presented data provide important information about accelerated oxide reliability testing beyond 2508C, and make it possible to quickly evaluate the reliability of high temperature CMOS technologies at operation temperature.

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Implementation of a digitally controlled SiC CMOS PWM generator using a tunable current-starved delay generator for high-temperature switched-mode regulators

Roy

Murphee

Abbasi

et al. 2016

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

Cited by 5 publications

References 6 publications

Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing

Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing

Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology

Implementation of a digitally controlled SiC CMOS PWM generator using a tunable current-starved delay generator for high-temperature switched-mode regulators

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