High-temperature conduction behaviors of HfO2/TaN-based metal-insulator-metal capacitors

Abstract

Articles you may be interested inConduction processes in metal-insulator-metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition J. Vac. Sci. Technol. A 32, 01A122 (2014); 10.1116/1.4843555 Perimeter and area current components in HfO2 and HfO2−x metal-insulator-metal capacitors J. Vac. Sci. Technol. B 31, 01A117 (2013); 10.1116/1.4774104 Reliability studies on Ta 2 O 5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodizationHigh-temperature ͑ϳ90-150°C͒ conduction mechanisms of metal-insulator-metal ͑MIM͒ capacitors with atomic-layer-deposited HfO 2 dielectric are studied. In the low field range, the Schottky emission current is dominant, and the deduced dielectric constant is close to the static one of HfO 2 . In the high field range, the resulting leakage current complies with the Poole-Frenkel ͑PF͒ emission, which is demonstrated by the fact that the extracted dielectric constant equals the optical frequency one ͑i.e., square of refractive index͒ of HfO 2 . The underlying mechanisms are discussed based on carrier velocities under different electric fields. Further, the deduced Schottky barrier height is ϳ0.251-0.274 eV in the low field range, which relates to the contributions from high density traps in the HfO 2 film and the nonideal TaN/ HfO 2 interface, etc. The extracted trap potential well depth for the PF effect is ϳ1.11-1.37 eV in the high field range.

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

“…[221][222][223][224] This is consistent with the general appearance of the HfO 2 IV trace in Fig. 4 differing from that for Al 2 O 3 and SiO 2 .…”

“…[1][2][3][4][5][6][7][8] Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. 12,13 They have also enabled significant performance gains in a wide variety of energy storage, 14,15 photovoltaic, 16,17 optoelectronic, 18 high-frequency, 19,20 high-power, 21 and high-temperature devices. 22 Due to exceptional thickness control and uniformity, atomic layer deposition (ALD) has become the preferred method for depositing most high-k dielectric materials in micro-/nano-electronic applications.…”

Large‐Area Rolled‐Up Nanomembrane Capacitor Arrays for Electrostatic Energy Storage

“…For electrostatic capacitors the change of the dielectric material affects the heart of the device, and as such represents a major challenge to the device fabrication, performance and functionality, which needs to be fundamentally explored and optimized. To optimize the electrical properties of the capacitors, we incorporate HfO 2 ( k ≈ 20–25) or TiO 2 ( k ≈ 40–86) into the Al 2 O 3 matrix . If for one side an increase of the capacitance is expected by such multilayered combination, the leakage current between the capacitor plates also tends to increase.…”

Thermal behavior of the microstructure and the electrical properties of magnetron-sputtered high-k titanium silicate thin films

“…2,3,11,13,14,[18][19][20][21][22][23][24][25][26][27] Silicates ͑i.e., a mixture of a metal oxide and SiO 2 ͒ have also been widely investigated, with the main focus put on Hf silicates. 2,3,11,13,14,[18][19][20][21][22][23][24][25][26][27] Silicates ͑i.e., a mixture of a metal oxide and SiO 2 ͒ have also been widely investigated, with the main focus put on Hf silicates.…”