High Temperature Elastic Constant Prediction of Some Group III-Nitrides

Reeber, Robert R.; Wang, Kai

doi:10.1557/s1092578300000156

Cited by 87 publications

(50 citation statements)

References 28 publications

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“…The supposed band offset at the AlGaN/GaN interface was 70% of the bandgap discontinuity. 43,44 The estimated influence of temperature on the band offset and the spontaneous and piezoelectric polarization at the Al 0.25 Ga 0.75 N / GaN interface 36,41,43,[45][46][47][48][49] is negligible in the first approximation. Quantum corrections to the C-V curves are also unnecessary in the studied case.…”

Section: Polarization Chargementioning

confidence: 99%

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Miczek

Mizue

Hashizume

et al. 2008

Journal of Applied Physics

179

141

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The impact of states at the insulator/AlGaN interface on the capacitance-voltage ͑C-V͒ characteristics of a metal/insulator/AlGaN/GaN heterostructure ͑MISH͒ capacitor was examined using a numerical solver of a Poisson equation and taking into account the electron emission rate from the interface states. A parallel shift of the theoretical C-V curves, instead of the typical change in their slope, was found for a MISH device with a 25-nm-thick AlGaN layer when the SiN x / AlGaN interface state density D it ͑E͒ was increased. We attribute this behavior to the position of the Fermi level at the SiN x / AlGaN interface below the AlGaN valence band maximum when the gate bias is near the threshold voltage and to the insensitivity of the deep interface traps to the gate voltage due to a low emission rate. A typical stretch out of the theoretical C-V curve was obtained only for a MISH structure with a very thin AlGaN layer at 300°C. We analyzed the experimental C-V characteristics from a SiN x / Al 2 O 3 / AlGaN/ GaN structure measured at room temperature and 300°C, and extracted a part of D it ͑E͒. The relatively low D it ͑ϳ10 11 eV −1 cm −2 ͒ in the upper bandgap indicates that the SiN x / Al 2 O 3 bilayer is applicable as a gate insulator and as an AlGaN surface passivant in high-temperature, high-power AlGaN/GaN-based devices.

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Section: Polarization Chargementioning

confidence: 99%

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Miczek

Mizue

Hashizume

et al. 2008

Journal of Applied Physics

179

141

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“…However, it has been found that the Young's modulus of CVD diamond degrades faster with respect to temperature than predicted in McSkimin and Andreatch [17] due to the presence of contaminants. It has been shown experimentally by Szuecs et al [13] that the variation of Young's modulus (E) with temperature, T, of CVD diamond undergoes a linear regression of the form (1) where the temperature coefficient, c T , has an average value of -1.027 x 10 -4 K -1…”

Section: Modulusmentioning

confidence: 99%

“…Using a room temperature Young's modulus, E RT [17], equation (1), and the average value for c T from [13], the temperature dependent Young's modulii for polycrystalline CVD diamond were calculated and are shown in table 2. The Poisson's ratio is assumed constant between -100 and 1000°C.…”

Section: Modulusmentioning

confidence: 99%

Modelling wafer bow in silicon–polycrystalline CVD diamond substrates for GaN-based devices

Edwards¹,

Bowen²,

Allsopp³

et al. 2010

J. Phys. D: Appl. Phys.

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Abstract.Composite silicon-polycrystalline CVD diamond wafers are potential substrates for GaN-based devices for use in harsh environments due to their high thermal conductivity and chemical stability. When cooled from a typical diamond deposition temperature of approximately 800°C to 25°C wafer bowing arises from a mismatch in the coefficients of thermal expansion of silicon and polycrystalline diamond. In this paper 100mm diameter silicon-polycrystalline diamond wafers have been modelled using ANSYS finite element software to investigate their bowing behaviour as a function of temperature and geometry. The maximum bow of a wafer occurred where the thicknesses of both the silicon and polycrystalline diamond layers was almost identical; this has been confirmed using analytical methods. Strategies are discussed for reducing wafer bow.

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“…14 However, there is considerable variation in the literature values of these constants; e.g., ϪC 13 /(C 11 ϩC 12 ) relating xx and zz for biaxial stress ( zz ϭ0) known as Poisson's effect, 14 varies by a factor of 1.7. 15 Note that thermal stresses in the epitaxial layers are biaxial by nature. 13 In contrast, the isotropic elastic constants E can be determined within only moderate uncertainties.…”

Section: A Stress Model Formulationmentioning

confidence: 99%

Raman characterization and stress analysis of AlN grown on SiC by sublimation

Liu

Edgar

et al. 2002

Journal of Applied Physics

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The stress distribution in bulk AlN crystals seeded on 6H-SiC was theoretically modeled and also determined experimentally from Raman peak positions. The full width at half maximum of the AlN Raman peaks showed the crystal quality improved as its thickness increased. The theoretical frequency shifts of the E 1 ͑transverse optical͒ mode calculated from model-predicted stress were in good agreement with experimental values taken along the edges of crystal samples. The stress was linearly distributed along the depth of the samples, and changed from compressive at the growing surface to tensile at the interface between AlN and SiC for thickness range of several hundred micrometers. Large tensile stresses, up to 0.6 GPa, were detected in the AlN at the interface. The effects of growth temperature and sample thickness were investigated. It is predicted that the AlN on 6H-SiC must be at least 2 mm thick to prevent it from cracking while cooling down the sample from a growth temperature of 2000°C.

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High Temperature Elastic Constant Prediction of Some Group III-Nitrides

Cited by 87 publications

References 28 publications

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Modelling wafer bow in silicon–polycrystalline CVD diamond substrates for GaN-based devices

Raman characterization and stress analysis of AlN grown on SiC by sublimation

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