The temperature dependence of the lattice parameters of ZnO was measured by x-ray powder-diffraction methods. Retrograde behavior was found to occur perpendicular to the c axis at 93°K. Lattice parameters at 4.2°K were a0=3.24826±0.00015Å, c0=5.2033±0.0018 Å. These results are compared with those for some other II-VI compounds.

Neutron powder diffraction methods with Rietveld analysis are utilized to determine GaN lattice parameters from 15 to 298.1 K. Using these measurements and literature data, we calculated the thermal expansion of gallium nitride (GaN) and predicted its higher temperature thermal expansion. The results are compared with available experimental data and earlier work.

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Thermoelastic properties are important for modeling thermal residual stresses and for optimizing the growth conditions of semiconductor thin films. Thermal expansions of AlN and GaN have been evaluated and predicted by us earlier [1] [2]. Here, high temperature elastic constants are estimated empirically from corresponding state relationships and data from other hexagonal GrimmSommerfeld compounds. This information together with our earlier thermal expansion data will further improve capabilities for calculating thermal residual stresses in various semiconductor thin films.