High temperature lead-free relaxor ferroelectric: Intergrowth Aurivillius phase BaBi2Nb2O9–Bi4Ti3O12 ceramics

Abstract

Articles you may be interested inElectric-field-temperature phase diagram of the ferroelectric relaxor system (1 − x)Bi1/2Na1/2TiO3 − xBaTiO3 doped with manganese J. Appl. Phys. 115, 194104 (2014) ͒ Aurivillius phase ceramic has been found to be a relaxor ferroelectric ͑RFE͒ with the highest reported temperature of the maximum of the dielectric permittivity ͑T m ͒ of all of the known RFE systems. Dielectric characterization revealed that it has two dielectric anomalies. The first one is a frequency independent broad dielectric constant peak at ϳ280°C, while the second anomaly shows relaxor behavior at 636°C ͑100 kHz͒. There is obvious frequency dispersion of dielectric response at room temperature, which is in agreement with dielectric properties of a typical relaxor. Ferroelectric hysteresis loops and a measurable value of piezoelectric constant d 33 confirmed the ferroelectric nature of BaBi 6 Ti 3 Nb 2 O 21 ceramics. The piezoelectric response remained even after annealing at temperatures above 636°C.;

Structure Evolution and Multiferroic Properties in Cobalt Doped Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ Intergrowth Aurivillius Compounds

“…Furthermore, due to the complexity of the structure, an interesting phenomenon called intergrowth has been reported in Aurivillius compounds181920. It has been demonstrated that the ferroelectricity of 4- and 3-layered intergrowth compounds is larger than that of individual 4- or 3-layered compound2122.…”

Relaxor behavior and photocatalytic properties of BaBi2Nb2O9

“…Figure illustrates P ‐ E and I ‐ E loops for BBNO ceramics measured at 10 Hz at two different temperatures (200 and 25°C). The hysteresis loops obtained at 200°C close to T m (241°C at 1 MHz) indicate the lossy dielectric behavior (Figure A). No current peaks associated with ferroelectric domain switching or field‐induced rotation and/or growth for PNRs were detected, even though E max was as high as 89 kV/cm.…”

Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method

“…It is important in this application that the films have low coercive fields, high remanent polarizations, and are fatigue-free. It has been recently reported that some A-site or B-site substitution in Bi 4 Ti 3 O 12 thin films could improve their ferroelectric and fatigue resistance properties [1][2][3][4][5]. The improvement in these films can be attributed to the enhanced stability of the oxygen in the Ti-O octahedron layer, which is caused by the substitution of stable rare-earth ions for the volatile Bi ions located near the Ti-O octahedron layer.…”