High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Fuchs, Christian; Brüggemann, Andrea; Weseloh, M. J.; Berger, Christian; Möller, Christoph; Reinhard, S.; Hader, J.; Moloney, Jerome V.; Bäumner, Ada; Koch, S. W.; Stolz, W.

doi:10.1038/s41598-018-19189-1

Cited by 15 publications

(17 citation statements)

References 27 publications

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“…Characteristic temperatures of T 0 = (76 ± 7) K and T 1 = (84 ± 9) K are determined using the same procedure as outlined above. Furthermore, a non-exponential behavior of T 1 is observed similar to previous studies [15]. A separate analysis of T 1 between 10°C & 60°C and 70°C & 100°C yields values of T 1 = (126 ± 7) K and T 1 = (33 ± 3) K, respectively.…”

Section: Resultssupporting

confidence: 87%

“…A differential efficiency of 58 % and a threshold current density of 0.31 kA/cm 2 are deduced from the measurement taken at 20°C. These results imply an improvement by 41 % while the threshold current density is reduced by −69 % compared to previous studies [15]. Furthermore, operation based on the fundamental type-II transition is verified by investigating the spectral properties of sample A above threshold in the temperature range between 10°C and 100°C.…”

Section: Resultssupporting

confidence: 63%

“…A comparison of the results obtained in Secs. III-A and III-B as well as the literature [15] indicate that a substantial improvement of the temperature stability is possible if the threshold current densities are decreased. Possible strategies towards this goal include a further optimization of the wave guiding structure, the utlization of more active "W"-QWHs per laser as well as the utilization of different material systems.…”

Section: Resultsmentioning

confidence: 80%

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Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As „W"-Quantum Well Lasers Emitting at 1.3 μm

Fuchs

Ludewig²,

Brüggemann

et al. 2018

2018 IEEE International Semiconductor Laser Conference (ISLC)

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The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improved homogeneity while the growth process is carried out in a single run for an improved quality. Furthermore, the optical confinement factor is increased by increasing the aluminum concentration within the cladding layers to a value of 65 %. The procedure is carried out for devices with emission wavelengths of 1.26 µm as well as 1.30 µm. Differential efficiencies as high as 58 % and threshold current densities as low as 0.16 kA/cm 2 are observed in case of devices emitting at 1.26 µm at room temperature. Furthermore, excellent characteristic temperatures of T 0 = (72 ± 5) K and T 1 = (293 ± 16) K are recorded in the temperature range between 10°C and 100°C. Devices emitting at 1.30 µm exhibit differential efficiencies of 31 % and threshold current densities of 0.50 kA/cm 2 at room temperature. Further improvements of these properties and wavelength extension schemes are briefly discssused.

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Section: Resultssupporting

confidence: 87%

Section: Resultssupporting

confidence: 63%

Section: Resultsmentioning

confidence: 80%

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Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As „W"-Quantum Well Lasers Emitting at 1.3 μm

Fuchs

Ludewig²,

Brüggemann

et al. 2018

2018 IEEE International Semiconductor Laser Conference (ISLC)

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“…First experimental observation of room‐temperature lasing from a (Ga,In)As/Ga(As,Sb)/(Ga,In)As W‐type structure has been reported in 2002 [10]. Recently, promising results have been achieved for (Ga,In)As/Ga(As,Sb)/(Ga,In)As W‐type structures showing laser emission at 1.3 μm [11]. Since Bi incorporation in GaAs shows an upward shift of the valance band by ∼53 meV/%Bi, replacing Ga(As,Sb) with Ga(As,Bi) gives an exciting path for novel laser devices [12].…”

Section: Introductionmentioning

confidence: 99%

Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diode

Hepp

Lehr

Günkel

et al. 2021

Electronics Letters

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The ongoing pursuit for laser device emitting in the near‐infrared spectral region on GaAs substrates has led to various material systems and device concepts. Alloys containing dilute amounts of Bismuth are promising candidates due to the already substantial band gap shift when incorporating low molar fractions of Bi in the GaAs host lattice. However, devices emitting at technologically essential wavelengths of 1.3 and 1.55 μm have yet to be demonstrated using this material system. Especially the non‐equilibrium nature of the growth conditions required to grow the metastable material makes epitaxial growth with high molar fractions of Bi challenging. An alternate approach to reach the desired wavelengths exploits a type‐II band alignment between two materials to push the emission wavelength further into the telecom bands. Here, room‐temperature laser operation of the first type‐II structure employing Ga(As,Bi) as hole confining layer and (Ga,In)As as electron confining layer is demonstrated. Sample growth is conducted by low‐pressure metalorganic vapour phase epitaxy. Broad area laser devices are processed and characterized by electroluminescence measurements. A threshold current density of 3.86 kA/cm2 and emission wavelength of 1037 nm are observed, showing this device concept's potential for future lasers in the telecom bands.

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“…In pulsed operation, electrical injection pumped edge-emitting gain chips based on type-II QW design have produced pulses with 1.4 W output power per facet [2]. Not only has it been demonstrated that type-II QWs are able to reach new wavelength ranges but the studies of the systems in the 1.3 µm region also showed that the type-II QW configuration tends to be less sensitive to changes in temperature [3].…”

Section: Introductionmentioning

confidence: 99%

Mode-locking in vertical external-cavity surface-emitting lasers with type-II quantum-well configurations

Kilen

Koch

Hader

et al. 2019

Applied Physics Letters

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A microscopic study of mode-locked pulse generation is presented for vertical external-cavity surface-emitting lasers utilizing type-II quantum well configurations. The coupled Maxwell semiconductor Bloch equations are solved numerically where the type-II carrier replenishment is modeled via suitably chosen reservoirs. Conditions for stable mode-locked pulses are identified allowing for pulses in the 100 fs range. Design strategies for type-II configurations are proposed that avoid potentially unstable pulse dynamics.

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High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Cited by 15 publications

References 27 publications

Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As „W"-Quantum Well Lasers Emitting at 1.3 μm

Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As „W"-Quantum Well Lasers Emitting at 1.3 μm

Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diode

Mode-locking in vertical external-cavity surface-emitting lasers with type-II quantum-well configurations

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