Mode-locking in vertical external-cavity surface-emitting lasers with type-II quantum-well configurations

Kilen, I.; Koch, S. W.; Hader, J.; Moloney, Jerome V.

doi:10.1063/1.5098903

Cited by 3 publications

(1 citation statement)

References 24 publications

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“…To date, for 2-µm VECSEL, the understanding of the gain parameters heavily relies on simulations. These simulations often give limited insight since they focus on quantum structures or an isolated quantum well (QW) and therefore often ignore micro-resonator effects, temperature gradients or the integration of the QW that can potentially change the gain [24][25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

Gaulke

Heidrich²,

Alaydın

et al. 2022

Vertical External Cavity Surface Emitting Lasers (VECSELs) XI

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We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of around 2 µm. To date, intracavity heatspreaders have been required for good average output power, which have many trade-offs, especially for passive modelocking. Here we demonstrate a record high average output power of 810 mW without an intracavity heatspreader using a backside-cooled non-resonant VECSEL chip optimized for modelocking. In addition, we introduce and demonstrate an optical characterization for a wavelength range of 1.9 to 3 µm to precisely measure wavelength-dependent gain saturation and spectral gain. Gain characteristics are measured as a function of wavelength, fluence, pump power and temperature. Small signal gain of more than 5%, small saturation fluences and broad gain bandwidths of more than 90 nm are demonstrated. In comparison to a commercial VECSEL chip with an intracavity heatspreader, we have obtained similar average output power even though our VECSEL chip is designed for antiresonance.

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Section: Introductionmentioning

confidence: 99%

High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

Gaulke

Heidrich²,

Alaydın

et al. 2022

Vertical External Cavity Surface Emitting Lasers (VECSELs) XI

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Gain recovery dynamics in active type-II semiconductor heterostructures

Schäfer

Stein

Lorenz

et al. 2023

Applied Physics Letters

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Type-II heterostructures as active layers for semiconductor laser devices combine the advantages of a spectrally broad, temperature stable, and efficient gain with the potential for electrical injection pumping. Their intrinsic charge carrier relaxation dynamics limit the maximum achievable repetition rates beyond any constraints of cavity design or heat dissipation. Of particular interest are the initial build up of gain after high-energy injection and the gain recovery dynamics following depletion through a stimulated emission process. The latter simulates the operation condition of a pulsed laser or semiconductor optical amplifier. An optical pump pulse injects hot charge carriers that eventually build up broad spectral gain in a model (Ga,In)As/GaAs/Ga(As,Sb) heterostructure. The surplus energies of the optical pump mimic the electron energies typical for electrical injection. Subsequently, a second laser pulse tuned to the broad spectral gain region depletes the population inversion through stimulated emission. The spectrally resolved nonlinear transmission dynamics reveal gain recovery times as fast as 5 ps. These data define the intrinsic limit for the highest laser repetition rate possible with this material system in the range of 100 GHz. The experimental results are analyzed using a microscopic many-body theory identifying the origins of the broad gain spectrum.

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High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

et al. 2021

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We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of around 2 μ m . To date, intracavity heatspreaders have been required for good average output power, which have many trade-offs, especially for passive modelocking. Here we demonstrate a record high average output power of 810 mW without an intracavity heatspreader using a backside-cooled non-resonant VECSEL chip optimized for modelocking. In addition, we introduce and demonstrate an optical characterization for a wavelength range of 1.9 to 3 μ m to precisely measure wavelength-dependent gain saturation and spectral gain. Gain characteristics are measured as a function of wavelength, fluence, pump power and temperature. Small signal gain of more than 5%, small saturation fluences and broad gain bandwidths of more than 90 nm are demonstrated. In comparison to a commercial VECSEL chip with an intracavity heatspreader, we have obtained similar average output power even though our VECSEL chip is designed for antiresonance.

show abstract

Mode-locking in vertical external-cavity surface-emitting lasers with type-II quantum-well configurations

Cited by 3 publications

References 24 publications

High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

Gain recovery dynamics in active type-II semiconductor heterostructures

High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

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