High temperature operation of quantum dots-in-a-well infrared photodetectors

Increased InAs quantum dot size and density using bismuth as a surfactant

“…[1][2][3][4] Further progress in QD-based devices will require improved control over the QD size, uniformity, and density, all of which influence the QD electronic states. The QD density and size are affected by a variety of growth conditions including the growth rate, substrate temperature, growth interruptions, and surrounding InGaAs quantum wells.…”

Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

“…The infrared photodetectors (IRPD) based on quantum dots in quantum well (DWELL) structures have several advantages compared to other architectures, for example, higher operating temperature [1,2], multicolour detection [3] and better optical quality of the QDs due to strain relaxation [4]. They also allow tuning of the detection wavelength by changing the parameters of the QW (composition, thickness), thus changing the position of the excited state, without modifying the bound state in the QD.…”

Room temperature operation of InxGa1−xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

“…Nevertheless, recently reported QDIP performances are still far below the theoretical expectation. 10,11 Recently, the Sb-based InSb/InAs type-II material system has attracted much interest in the MWIR band due to its unique type-II band alignment which can provide lowenergy optical transitions in the III/V material system. 12,13 Although the InSb/InAs material system has a large mismatch (7%), similar to the well-known InAs/GaAs material system, Stranski-Krastanov (S-K) mode growth of InSb on InAs does not result in high quality QD due to the Sb segregation and surfactant effects.…”