High-voltage Schottky diode on epitaxial diamond layer

Ebert, Wolfgang; Vescan, A.; Gluche, P.; Borst, T.H.; Kohn, E.

doi:10.1016/s0925-9635(96)00739-x

Cited by 46 publications

(19 citation statements)

References 3 publications

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“…Very high reverse blocking-voltage of diamond Schottky barrier diodes (SBDs) [2,3] have been reported, however, the breakdown field is typically smaller than 2 MV/cm, this value is significantly low compared with the universally accepted limit of breakdown fields in a diamond [6][7][8]. Recently, higher breakdown field of 3.1 MV/cm has been confirmed [9], and further improvement is expected.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a field plate structure for diamond Schottky barrier diodes

Ikeda

Umezawa

Tatsumi

et al. 2009

Diamond and Related Materials

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Section: Introductionmentioning

confidence: 99%

Fabrication of a field plate structure for diamond Schottky barrier diodes

Ikeda

Umezawa

Tatsumi

et al. 2009

Diamond and Related Materials

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“…For this type of applications, in order to suppress an energy‐loss for the high‐power switching devices, “low on‐resistance ( R on S ),” “fast switching property,” and “high blocking voltage ( V block )” are required simultaneously. Thus, when we apply the excellent properties of diamond to the low‐loss high‐power switching devices, fabrication of a diode structure which meets the aforementioned conditions can be a key‐technology 1–12.…”

Section: Introductionmentioning

confidence: 99%

“…Diamond pn junctions 9 were fabricated for the first time in 2001 after achieving n‐type diamond by phosphorus (P) doping in 1997 for (111) surfaces 13. In 2005, the n‐type diamond was also achieved for (001) surfaces 14, and subsequent research of pn junctions 10–12 has been performed in addition to that of Schottky‐junctions 1–8. However, the resistivity of n‐type layer is still high (10 5 –10 6 Ωcm at phosphorus concentration of ∼10 18 cm −3 8, 15) owing to the deep phosphorus donor level.…”

Section: Introductionmentioning

confidence: 99%

Diamond Schottky‐pn diode without trade‐off relationship between on‐resistance and blocking voltage

Makino

Kato

Tokuda

et al. 2010

Physica Status Solidi (a)

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We successfully improved a merged diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p þ -type layer and a Schottky metal. According to the analysis of operation mechanisms based on band diagrams, we increased the acceptor concentration in the p þ -type layer in order to decrease the on-resistance (R on S), and increased the n-type layer width to reach higher blocking voltage (V block ). Consequently, much lower R on S of 0.03 mV cm 2 and higher V block than those of the previously reported diamond SPND were achieved simultaneously. Thus, we elucidated experimentally that the diamond SPND has no trade-off relationship between R on S and V block , and is suitable for low-loss high-power switching devices.

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“…The high doping concentration in the δ-pulse is associated with a strong reduction of the boron activation energy so that a highly conductive p-channel below the film surface is created. Pulse-doped diamond layers with very low surface charge concentrations have recently made possible fabrication of diodes with low reverse current densities and a break-through characteristic at U = -150 V. Similarly, a high temperature Schottky-diode has been fabricated operating up to 1000 °C with a forward-toreverse current ratio of >10 at |U| < 10 V using boron pulse-doped diamond as the semiconductor and degenerate doped Si as the metal [EBERT (1997); VESCAN ( , 1998a] (Fig. 10).…”

mentioning

confidence: 99%

“…Right: Force/pressure sensors designed as an array of HOD-diamond cantilever beams[GLUCHE (1997); FLÖTER (1998);].…”

mentioning

confidence: 99%

Synthetic Diamond — Basic Research and Applications

Sauer

1999

Cryst. Res. Technol.

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Cryst. Res. Technol. 34 1999 2 227-241Non-equilibrium growth of synthetic diamond layers by chemical vapour deposition (CVD) techniques on heterosubstrates has largely been improved over the past decade. On silicon substrates highly textured and oriented diamond films can be grown with optical transparencies and thermal conductivities suitable for broad-band optical windows and heat spreaders. Boron pulse-doping of homoepitaxial diamond layers leads to high p-conductivity at room temperature allowing the fabrication of Schottky diodes and field effect transistors operating at temperatures up to 1000 K. Other devices such as sensors and detectors are being successfully fabricated. At the same time many basic questions remain to be solved including efficient n-type doping.The physical and chemical properties of diamond as deduced from investigations on natural stones over decades are exceptional in many respects suggesting diamond to be useful for numerous interesting applications not attainable with other materials. The following table lists selected properties and values together with related potential applications:property/value application largest hardness (10000 kp/mm² Vickers) of all solid materials hard cutting tool coatings chemical resistance anticorrosion layers, coatings in aggressive ambient small friction coefficient tribological applications bio-compatibility medical applications, bio-sensing Large thermal conductivity Λ = 20 W/cmK @ 300 K heat diffusers e.g. in high power microelectronics Broad-band optical transparency, λ = 2.5 µm... 230 nm Optical windows, lens protection layers, masks for X-ray lithography Large electronic bandgap, E g ≈ 5.5 eV Large carrier mobility µ n = 2200 cm²/Vs µ p = 1600 cm²/Vs Large saturation drift velocity v n = 2.7 × 10 7 cm/s Large break-down field strength E = 5 × 10 5 V/cm

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High-voltage Schottky diode on epitaxial diamond layer

Cited by 46 publications

References 3 publications

Fabrication of a field plate structure for diamond Schottky barrier diodes

Fabrication of a field plate structure for diamond Schottky barrier diodes

Diamond Schottky‐pn diode without trade‐off relationship between on‐resistance and blocking voltage

Synthetic Diamond — Basic Research and Applications

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