2018
DOI: 10.1109/led.2018.2868560
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High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

Abstract: High-performance vertical GaN-based p-n junction diodes fabricated using bandgap selective photoelectrochemical etching-based epitaxial liftoff (ELO) from bulk GaN substrates are demonstrated. The epitaxial GaN layers and pseudomorphic InGaN release layer were grown by MOCVD on bulk GaN substrates. A comparison study was performed between devices after liftoff processing (after transfer to a Cu substrate) and nominally identical control devices on GaN substrates without the buried release layer or ELO-related … Show more

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Cited by 18 publications
(6 citation statements)
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“…For all samples, the transition between the two minima is not textbook-like as it reaches a maximum at about 2.6 V before approaching n = 1. This effect is also observed in other publications [24], but not explained yet.…”
Section: Forward Characterizationsupporting
confidence: 74%
“…For all samples, the transition between the two minima is not textbook-like as it reaches a maximum at about 2.6 V before approaching n = 1. This effect is also observed in other publications [24], but not explained yet.…”
Section: Forward Characterizationsupporting
confidence: 74%
“…This concept was demonstrated by introducing a thin i-InGaN layer between the bulk GaN substrate and a p-i-n heterostructure [213] (Figure 44(a)). This i-InGaN layer can be photoelectrochemically etched resulting in an epitaxial liftoff from the bulk GaN substrate.…”
Section: Choice Of Substratementioning
confidence: 99%
“…6a shows the measured forward current density plotted in linear scale. The diode exhibits a forward current density of above 1 kA/cm 2 at 6 V with the turn-on voltage (V on , measured at 100 A/cm 2 ) [15,28] being close to 4.5 V. The specific on-resistance (R on ) of 1.5 mOhm-cm 2 is extracted from the linear current density plot. While there is still room to improve the V on and R on by p-contact resistance optimization, these values are superior or comparable with reported values of GaN diodes on HVPE substrates [29,30].…”
Section: Invited Papermentioning
confidence: 99%