Higher moments of the implanted-ion profiles of bismuth in silicon

Liang, J.H.

doi:10.1016/s0168-583x(99)00061-0

Nuclear Instruments and Methods in Physics Research Section B:

1999

DOI: 10.1016/s0168-583x(99)00061-0

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Higher moments of the implanted-ion profiles of bismuth in silicon

J.H. Liang

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Cited by 5 publications

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Range parameters of Bn cluster ion implantation in silicon

Liang

Han

2004

Nuclear Instruments and Methods in Physics Research Section B:

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Higher moments of the implanted-ion profiles of bismuth in silicon

Cited by 5 publications

References 24 publications

Range parameters of Bn cluster ion implantation in silicon

Range parameters of Bn cluster ion implantation in silicon

Implantation and post-annealing characteristics when impinging small Bn clusters into silicon at low fluence

Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

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