Range parameters of Bn cluster ion implantation in silicon

Liang, Jenq–Horng; Han, Haewook

doi:10.1016/j.nimb.2004.01.163

Cited by 9 publications

(2 citation statements)

References 15 publications

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“…To meet the requirements of shallow junction depth, besides reducing ion energy and changing the incident angle, the implantation of polyatomic ions (clusters) has become a practical and feasible approach. Advantages of the cluster implantation are: (i) a 1/ n partitioning factor for the implantation energy (where n is the number of atoms in the cluster); (ii) a n 5/2 amplification factor for the beam transport gain, due to reduction of the space charge effect; (iii) a 1/ n reduction factor for the implantation time with the same current; and (iv) a non‐linear factor for the implantation‐induced damage, which suppresses transient‐enhanced diffusion during annealing treatment …”

Section: Introductionmentioning

confidence: 99%

“…(i) a 1/n partitioning factor for the implantation energy (where n is the number of atoms in the cluster); (ii) a n 5/2 amplification factor for the beam transport gain, due to reduction of the space charge effect; 2,3 (iii) a 1/n reduction factor for the implantation time with the same current; 3 and (iv) a non-linear factor 4 for the implantationinduced damage, which suppresses transient-enhanced diffusion during annealing treatment. 5 In shallow implantation, most researchers choose an injection of B into Si, since B possesses the highest solid solubility with low acceptor ionization energy and hence high electrical activity.…”

Section: Introductionmentioning

confidence: 99%

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Small Al cluster ion implantation into Si and 4H‐SiC

Zeng

Pelenovich

Ieshkin

et al. 2019

Rapid Comm Mass Spectrometry

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Rationale Continuously downscaling integrated circuit devices requires fabrication of shallower p‐n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. Methods In this study to carry out low‐energy implantation into single crystalline silicon and 4H‐SiC samples we employ Aln− (n = 1–5) clusters with energy in the range of 5–20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS; IONTOF TOF.SIMS‐5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. Results A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. Conclusions The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF‐SIMS depth profiling of the shallow cluster implantation is feasible.

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Section: Introductionmentioning

confidence: 99%