1995
DOI: 10.1016/0032-3861(95)93589-e
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Higher-order structure and thermal transition behaviour of poly(di-–hexylsilane)

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Cited by 16 publications
(11 citation statements)
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“…The LT spectra show weak additional bands in the region of the HT maxima. The LT maxima are in line with reported data on the solid phases of poly(di- n -hexylsilylene) ( 1 ) , and are characteristic of emission from all-trans segments. It is conspicuous that in the LT phases emission maxima are identical, whereas the LT solid state UV spectra show distinct differences.…”
Section: Resultssupporting
confidence: 90%
“…The LT spectra show weak additional bands in the region of the HT maxima. The LT maxima are in line with reported data on the solid phases of poly(di- n -hexylsilylene) ( 1 ) , and are characteristic of emission from all-trans segments. It is conspicuous that in the LT phases emission maxima are identical, whereas the LT solid state UV spectra show distinct differences.…”
Section: Resultssupporting
confidence: 90%
“…9a-d). Similar patterns were observed previously by Kyotani et al [36]. By delicately varying experimental conditions near T c , when nucleation of the crystalline ordered phase within the hcm takes place, it appears possible to obtain separately, one at a time, narrow UV bands (half-width ≤1000 cm −1 ) with λ max either~375, or~365, or~355 nm (Fig.…”
Section: Uv Criteria Of Assignment Of Polysilane Modificationssupporting
confidence: 80%
“…The interband σ-σ* transition of solid pdHexSi displays sensitivity to its processing and/or thermal history with, in at least one instance, the anomalous appearance of an additional 390 nm UV absorption peak. 31 Other studies have convincingly demonstrated the existence of Si backbone conformations other than the conventional trans-planar (or anti, A), gauche (G), and helical forms. Methyl/ethyl or all ethyl oligosilane modeling studies 28,29 have identified a large number of thermodynamically stable intermediate Si backbone conformations and these are referred to as transoid (T), deviant (D) and ortho (O) with approximate Si-Si-Si-Si dihedral angles of 170°, 150°and 90°respectively (with T+/T-and D+/D-for both positive and negative helicities).…”
Section: Introductionmentioning
confidence: 98%
“…With respect to the crystalline phase of solid pdHexSi, the nominal 372 nm absorption band often appears to contain a distinguishable shoulder near 360 nm. The interband σ−σ* transition of solid pdHexSi displays sensitivity to its processing and/or thermal history with, in at least one instance, the anomalous appearance of an additional 390 nm UV absorption peak …”
Section: Introductionmentioning
confidence: 99%