Higher Reliability Tetraethylorthosilicate SiO₂Gate Insulator in Polysilicon Thin Film Transistors Formed by Two-Step Deposition Method

Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM

“…In contrast to the difficulty of controlling vertical GB positioning, the distribution of lateral directional GBs can be easily controlled by using multiple discrete depositions during polysilicon fabrication, enabling the formation of almost uniform GBs in the lateral direction [27][28][29]. This paper reports on the simulated memory performance of poly-Si 1T-DRAM devices as a function of their lateral GB's location and their lateral GB's presence or absence for varied vertical GB locations.…”

Variation of Chemical Vapor Deposited SiO2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing

“…Chemical vapor deposited (CVD) SiO 2 films have been applied to various semiconductor devices as electrical insulators, such as isolation layers in integrated circuits (ICs), and the gate dielectric in polycrystalline silicon thinfilm transistors (poly-Si TFTs). [1][2][3] Recently, they have been used as gate dielectrics in power metal-oxide-semiconductor field-effect transistors (power MOSFETs) on various substrates including SiC and GaN. 4,5) Generally, deposited SiO 2 has demerits such as having low density and showing a high leakage current compared with thermally grown SiO 2 .…”

Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing

“…Tetraethylorthosilicate [Si(OC 2 H 5 ) 4 ): TEOS] SiO 2 is used for the internal isolation dielectric layers in ICs. 1) Recently, TEOS-SiO 2 has also been considered as an attractive electrical insulator for use as a gate dielectric in polycrystalline silicon thin-film transistors (poly-Si TFTs), 2) because it can be formed with a low thermal budget compared with thermally grown SiO 2 . Additionally, thick SiO 2 films can be formed easily.…”