Highly Efficient Infrared Quantum Cutting in Tb³⁺−Yb³⁺ Codoped Silicon Oxynitride for Solar Cell Applications

Abstract

A high effi ciency infrared quantum cutting effect in a Tb 3+ -Yb 3+ codoped silicon oxynitride system is demonstrated. The thin fi lms are deposited on Si substrates by reactive magnetron co-sputtering of a Si target topped with Tb 4 O 7 and Yb 2 O 3 chips under pure nitrogen plasma. The photoluminescence dynamics are investigated, revealing a quantum effi ciency of this system at 980 nm up to 197% for the higher Yb 3+ concentration. Thus, via a cooperative transfer mechanism between Tb 3+ and Yb 3+ , an absorbed UV-visible photon gives rise to almost two emitted IR photons. Such a down-conversion effect is demonstrated upon indirect excitation of energy donors, via defect states in the host matrix. These down-converter fi lms could be directly and easily integrated on top of the Si-based solar cell to improve the photoelectric conversion effi ciency at a lower cost. An evaluation of the additional external quantum effi ciency is deduced from this optical system and found to be almost 2%.Adv. Optical Mater. 2013, 1, 855-862 856 wileyonlinelibrary.com

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