Highly efficient optical phase modulator in SOIwaveguides

Tang, Chunxiao; Reed, Graham T.

doi:10.1049/el:19950328

Cited by 136 publications

(45 citation statements)

References 10 publications

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“…In the early years, devices were generally slow (~MHz) and seemingly had little prospect for applications in high speed systems. Most monolithic devices employed carrier injection, using the plasma dispersion effect for either modulation of the material refractive index or its absorption [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59]. In most cases PIN diode structures were formed around the waveguide to electrically control the injection of electrons and holes into the path of the propagating light.…”

Section: The State Of the Artmentioning

confidence: 99%

Silicon optical modulators

et al. 2010

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Optical technology is poised to revolutionise short reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such interconnect is the optical modulator. Modulators have been improved dramatically in recent years. Most notably the bandwidth has increased from the MHz to the multi GHz regime in little more than half a decade. However, the demands of optical interconnect are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics.Minimising metrics such as the energy per bit, and device footprint, whilst maximising bandwidth and modulation depth are non trivial demands. All of this must be achieved with acceptable thermal tolerance and optical spectral width, using CMOS compatible fabrication processes. Here we discuss the techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future.

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Section: The State Of the Artmentioning

confidence: 99%

Silicon optical modulators

et al. 2010

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“…Later on Silicon-on-Insulator (SOI) wave guiding structures became more popular due to the possibility of much stronger optical confinement. In the early 90's, work carried out at the University of Surrey by Tang et al [1], in support of an earlier simulation paper [2] showed that it was possible to obtain a 30% increase in the concentration of carriers injected into the wave guiding region of a phase modulator ( [1]) by changing the sidewall angle of the rib from vertical to 54.7 degrees. The separation distance of the n + injecting regions remained constant for both the vertical and angled rib waveguides.…”

Section: The Early Years To Nowadaysmentioning

confidence: 91%

40 Gb/s high-speed silicon modulator for TE and TM polarisation

2011

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The workhorse of future high speed short reach interconnect technology will be the optical modulator. These devices in silicon have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Hence, the need for devices with compact real estate, broadband characteristics, operating at high speed and working for both polarisation is of outmost importance. Here we describe the approach taken at Surrey to meet these requirements from the early days to the more recent work where some initial data are introduced. The recent all-silicon optical modulator uses a CMOS compatible fabrication and demonstrates high data rate with large extinction ratio for TE and TM polarisations. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to facilitate a high yield, reliable fabrication process.

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“…Based on this reason, SOI is the right substrate material for the optical micro-ring. Besides that, the low operational cost and the compatibility of the SOI with current microelectronic fabrication technique is also another advantageous reason for its usage (Tang and Reed, 1995;Png et al, 2004). SOI also has a unique property where it is transparent in the range of optical telecommunications wavelengths of 1.3 and 1.55 µm (Hewitt and Reed, 2000).…”

Section: Introductionmentioning

confidence: 99%

Effect of Doping Position on the Active Silicon-on-Insulator Micro-Ring Resonator Based on Free Carrier Injection

Mardiana

Shaari

Menon

et al. 2012

American Journal of Applied Sciences

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Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS technologies in electronics integrated circuit. Silicon photonics has offers great potential to overcome this critical bottleneck due to the advantages of optical interconnects. Silicon-based optical micro-ring resonator is promising basic element of future electronic-photonic integrated circuits because of its wide applications on photonic devices such as modulator, switch and sensor. Approach: This study highlights the study of the free carrier injection effect on the active SOI micro-ring resonator. The effect of the free carrier injection on micro-ring resonator is evaluated by varying the p + and n + doping position. Device performances are predicted using numerical modeling software 2D SILVACO as well as Finite Difference Time Domain (FDTD) simulation software, RSOFT. Results:The results show that the refractive index change increases as the p + and n + doping position become closer to the rib waveguide. A shift in resonant wavelength of around 2 and 3 nm was is predicted at 0.9V drive forward voltage for 0.5 and 1.0 µm gap distance between p + and n + doping regions and the sidewall of the rib waveguide. It is also shown that 10 and 9.2 dB maximum change of the output response obtained through the output of the transmission spectrum of the device with gap 0.5 and 1.0 µm. Conclusion: The closer distance between p + and n + doping regions and the rib waveguide has optimal shift of resonance wavelength and better extinction ratio of transmission spectrum.

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Highly efficient optical phase modulator in SOIwaveguides

Cited by 136 publications

References 10 publications

Silicon optical modulators

Silicon optical modulators

40 Gb/s high-speed silicon modulator for TE and TM polarisation

Effect of Doping Position on the Active Silicon-on-Insulator Micro-Ring Resonator Based on Free Carrier Injection

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