40 Gb/s high-speed silicon modulator for TE and TM polarisation

Gardès, Frédéric; Thomson, David J.; Reed, Graham T.

doi:10.1117/12.874715

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…As demonstrated previously, traditional semiconductor materials have been introduced to realize active photonic devices on silicon successfully, such as lasers [25][26][27], photodetectors [28,29], and modulators [30,31]. In this case, one of the most troublesome issues is the compatibility of the introduced materials in the fabrication processes as well as the structural design.…”

Section: Introductionmentioning

confidence: 99%

Hybrid silicon photonic devices with two-dimensional materials

Liu

Chen

et al. 2020

Nanophotonics

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Abstract Silicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two-dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon-based photodetectors with 2D materials for the wavelength-bands from ultraviolet (UV) to mid-infrared (MIR). The other is silicon photonic switches/modulators with 2D materials, including high-speed electro-optical modulators, high-efficiency thermal-optical switches and low-threshold all-optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.

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Section: Introductionmentioning

confidence: 99%

Hybrid silicon photonic devices with two-dimensional materials

Liu

Chen

et al. 2020

Nanophotonics

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“…Silicon photonics (SiPh) technology is currently regarded as a promising candidate to address these challenges. SiPh transceivers offer single-channel data rates of 40 Gb/s and above [1,2] as well as wavelengthmultiplexing [3]. This would allow the transmission of more data through a single optical fibre than in current systems and thereby the fibre count in the detectors could be scaled down.…”

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confidence: 99%

Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

et al. 2016

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HL-LHC will require new optical data transmitters that can provide high data rates and be resistant against high levels of radiation. Furthermore, new design paths for future optical readout systems for HL-LHC could be opened if there was a possibility to integrate the optical components with their driving electronics and possibly also the silicon particle sensors themselves. All these functionalities could potentially be combined in the silicon photonics technology which currently receives a lot of attention for conventional optical link systems. Silicon photonic test chips were designed in order to assess the suitability of this technology for deployment in high-energy physics experiments. The chips contain custom-designed Mach-Zehnder modulators, pre-designed "building-block" modulators, photodiodes and various other passive test structures. The simulation and design flow of the custom designed Mach-Zehnder modulators and some first measurement results of the chips are presented. K: Radiation damage to electronic components; Radiation-hard electronics; Optical detector readout concepts 1Corresponding author.

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“…A further carrier depletion phase modulator is also under development within the UKSP program. It is also based upon a PN diode and has demonstrated 40Gbit/s and 10Gbit/s modulation with extinction ratios up to 6dB and 7dB respectively for both TE and TM polarisations [3].…”

Section: Carrier Depletion Modulationmentioning

confidence: 99%

Silicon optical modulators for high data rate applications

Thomson

Gardès

Reed

et al. 2011

8th IEEE International Conference on Group IV Photonics

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In this work we describe the carrier depletion MZI modulators, slow wave structures for modulation enhancement and the QCSE modulator which are under development in the European HELIOS project and the UK Silicon Photonics project. IntroductionHigh performance silicon optical modulators are key to many silicon based photonic applications. Over the previous decade the development seen in the performance of silicon optical modulators has been vast. Several routes to modulation have been used to overcome the lack of a strong electro optic effect in silicon. These include the plasma dispersion effect, III-V hybrid device fabrication, SiGe devices, Polymer and Strain induced electro-optic effects. Reported performances now regularly range from 10Gbit/s up to 40Gbit/s. HELIOS, which is a European FP7 funded project and the UK silicon photonics project (UKSP), funded by the EPSRC both involve the development of the different photonic components required to form photonic circuits with a range of functionality. Within both projects there is strong modulator activity with carrier depletion based modulation, QCSE modulation and structures to gain enhancement of the modulation effect under development. Carrier depletion modulationOptical modulators based upon free carrier depletion are widely regarded as being the simplest approach to achieve high performance modulation in silicon. They operate by reverse biasing a diode structure which is incorporated in or around an optical waveguide. The depletion of free carriers therefore interacts with the propagating light causing a change in phase through the plasma dispersion effect. Within the HELIOS project two phase modulators based upon this approach are under investigation using both PN and PIPIN diodes. Cross sectional diagrams of these devices are shown in figure 1. The first structure is based in silicon-on-insulator (SOI) of 220nm thickness. The waveguide section and the slab to one side is doped p type. The slab on the other side of the waveguide is then doped n type setting up a pn junction at the edge of the waveguide rib. The concentration of the n type doping is made larger than the p type doping such that the depletion region extends mainly into the waveguide during reverse bias. These lightly doped p and n type regions extend out to meet highly doped regions which in turn provide ohmic contacts to coplanar waveguide electrodes which are used to drive the device. The device

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40 Gb/s high-speed silicon modulator for TE and TM polarisation

Cited by 3 publications

References 14 publications

Hybrid silicon photonic devices with two-dimensional materials

Hybrid silicon photonic devices with two-dimensional materials

Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

Silicon optical modulators for high data rate applications

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