Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure

Park, Taegyun; Kim, Seung-Soo; Lee, Byeol Jun; Park, Tae Won; Kim, Hae Jin; Hwang, Cheol Seong

doi:10.1039/d3nr00271c

Cited by 9 publications

(2 citation statements)

References 28 publications

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“…Systematic material optimization is the key to achieving ideal OIMs. 156,157 We believe that with continuous research efforts, the challenges faced by OIM-based memristive devices could be gradually conquered, unleashing their application potential in next-generation electronics.…”

Section: Conclusion and Perspectivementioning

confidence: 99%

Organic iontronic memristors for artificial synapses and bionic neuromorphic computing

Xia,

Zhang,

et al. 2024

Nanoscale

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Section: Conclusion and Perspectivementioning

confidence: 99%

Organic iontronic memristors for artificial synapses and bionic neuromorphic computing

Xia,

Zhang,

et al. 2024

Nanoscale

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“…Among memristor-based digital logic gate technologies, stateful logic has received considerable attention because memristors not only store logic results but also perform logical operations, reducing memory access latency and improving computational efficiency. − This property arises from a fully CIM operating mechanism, where both input and output are provided by memory cells with the in situ restorage of output result . Despite these advantages, stateful logic operations are limited by device endurance characteristics because they require device state transitions.…”

mentioning

confidence: 99%

Programmable Threshold Logic Implementations in a Memristor Crossbar Array

Youn,

Lee,

Kim

et al. 2024

Nano Lett.

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In this study, we demonstrate the implementation of programmable threshold logics using a 32 × 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.

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Parallel Density‐Based Spatial Clustering with Dual‐Functional Memristive Crossbar Array

Cheong,

Shin,

Lee

et al. 2023

Adv Funct Materials

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Analog and digital switching performances in a Ta/HfO2/RuO2 (THR) memristor are studied to implement a density‐based spatial clustering of applications with noise (DBSCAN) algorithm in a low‐power, parallel‐computing memristor crossbar structure. In the analog mode THR memristor, more than 256 states can be stored through a fine‐tuning process with a denoising scheme. The analog mode crossbar array facilitates Euclidean distance calculation between any points in the given graphic dataset. In the digital mode, the on/off ratio of more than three orders of magnitude between the binary states is achieved, providing functionality to cluster the data points with a reduced number of operations. The parallel computing capacity of the adopted crossbar decreases the time complexity of the original DBSCAN from O(n2) to O(n). Through array‐level simulations, the effectiveness of hardware functionality is validated using representative synthetic datasets and single‐cell RNA sequences datasets.

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Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure

Abstract: The self-rectifying memristor with electronic bipolar resistive switching shows forming-free, highly rectifying properties and low operating power. Furthermore, configuring the memristors in a vertical array structure provides a higher memory...

Cited by 9 publications

References 28 publications

Organic iontronic memristors for artificial synapses and bionic neuromorphic computing

Organic iontronic memristors for artificial synapses and bionic neuromorphic computing

Programmable Threshold Logic Implementations in a Memristor Crossbar Array

Parallel Density‐Based Spatial Clustering with Dual‐Functional Memristive Crossbar Array

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