The excitation-dependent photoluminescence (PL) of ZnSe nanocrystals (NC) grown on GaAs (100) substrate was studied. The PL spectra observed corroborate previous observations of a bimodal size distribution of NC grown, and, in addition, evidence the existence of spectral diffusion with extend dependent on excitation power. Besides, it was also shown that at relatively intense excitation an extra band has arose in luminescence spectra due to biexcitons confined in NC of 3.5-4.0 nm size. The binding energy of these biexcitons was as large as 23 meV. In recent years the properties of highly excited semiconductor nanocrystals (NC) widely referred to as semiconductor quantum dots (QD) have gained much attention largely due to advance in application development motivated by the demonstration of effective lasing in CdSe-based QD [1]. At the same time the semiconductor compound which has received the most intense interest in previous years has been ZnSe known to have a room temperature direct band gap of 2,7 eV that corresponds to emission in the blue region of the spectrum. Properly tailored ZnSe-based QD are well suited for short wavelength light emitters, a fact recognized worldwide by research groups several of whom have expanded a great deal of effort attempting to produce ZnSe NC of high quality [2,3]. However properties of extremely small ZnSe crystals under intense optical excitation remain unexplored and require better insight.Recently, a vapor phase technique has been utilized to grow ZnSe nanocrystals atop GaAs (100) substrate [4]. The distinguishing feature of applied technique was the use of horizontal type quartz reactor exploiting a large (~250°C/cm) temperature gradient in the deposition zone just in front of substrate on which ZnSe NC were collected. Applied characterization techniques indicated the formation of two distinct sets of nanocrystals on the same substrate. The average characteristic sizes of NC in these sets have been estimated to be in the ranges of 36.6-41.2 and 3.5-4.0 nm while the effective Bohr radius ( ) a B of the free exciton in bulk ZnSe is known to be~50 C [5]. From these facts one can easily realize that samples described in Ref. 4 are unique since they provide chance to compare behavior of carriers confined in sub-excitonic and superexcitonic volumes of ZnSe by studying photoluminescence (PL) just from the same single sample. The present work extends research on those samples with the aim to investigate their emission spectra under high level of optical excitation.The excitation source was N 2 laser (337.1 nm) with optical pulses of 10 -8 s and 100 Hz repetition rate. In our case this excitation can be treated as a quasi-continuous-wave (qCW) excitation as the pulses used were long enough compared to all characteristic times known for nonequilibrium e-h system in direct-gap semiconductors.