Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials 1994
DOI: 10.7567/ssdm.1994.c-9-2
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Highly Reliable Silicon Nitride Films Made by Jet Vapor Deposition

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Cited by 3 publications
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“…We have also assumed as in [10] that a single transmission probability applies to all transitions in calculating the tunneling current. This approximation reduces (5) to (7) The goal in using the above numerical model is to provide an indication of the trends expected when changing the dielectric constant and barrier height of the insulators. These tunneling calculations have a number of approximations that must be considered.…”
Section: Tunneling Modelmentioning
confidence: 99%
“…We have also assumed as in [10] that a single transmission probability applies to all transitions in calculating the tunneling current. This approximation reduces (5) to (7) The goal in using the above numerical model is to provide an indication of the trends expected when changing the dielectric constant and barrier height of the insulators. These tunneling calculations have a number of approximations that must be considered.…”
Section: Tunneling Modelmentioning
confidence: 99%
“…Fortunately, this attribute has recently been demonstrated in jet-vapor deposited (JVD) silicon nitride [10]- [11], and is likely to be reproduced some day in advanced CVD silicon nitride as well. Therefore, the nitride layers in this study were all deposited by the JVD technique.…”
Section: Methodsmentioning
confidence: 88%
“…In advanced gate dielectric applications using ultrathin N/O stack, the trap density in the silicon nitride layer must be minimized to improve reliability and to reduce leakage current. In such a case, the current transport through the nitride is dominated by the electron tunneling process, as recently demonstrated [10], [11], and Publisher Item Identifier S 0741-3106(98)07391-1. previous models used for calculating the leakage current through N/O stacks are no longer valid.…”
Section: Introductionmentioning
confidence: 80%
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