Highly responsive and broadband photodetectors based on WS<sub>2</sub>–graphene van der Waals epitaxial heterostructures

Lan, Changyong; Li, Chun; Wang, Shuai; He, Tianying; Zhou, Zhifei; Wei, Dapeng; Guo, Huayang; Yang, Hao; Liu, Yong

doi:10.1039/c6tc05037a

Cited by 115 publications

(83 citation statements)

References 43 publications

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“…It is because the pristine graphene has zero bandgap, which results in high dark current without illumination. [26,38] Interestingly, the cutoff wavelength of the individual MoS 2 or WS 2 is in the visible spectral range, yet our FPD functions in the infrared wavelengths. [33][34][35] Recognizing the working principle of the FPD is crucial for improving its performance.…”

Section: Resultsmentioning

confidence: 86%

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS₂‐WS₂ Heterostructure with a Synergetic Photogenerating Mechanism

Xiong

Chen

et al. 2018

Adv Elect Materials

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have received considerable attention for their potential applications in future electronic and optoelectronic devices (e.g., transistors, photodetectors, sensors, and solar cells). [5][6][7][8][9][10] However, for photo detection applications, individual 2D materials do not possess sufficiently high responsivity (R), fast response time (τ), and broadband working bandwidth simultane ously. For example, photodetectors based on gapless pristine graphene display very fast time response and broadband detec tion spectra, but their responsivity is lim ited to a level of mA·W −1 , due to the low light absorption rate and fast electron-hole recombination in graphene. [8,[11][12][13] Photo detectors based on molybdenum disulfide (MoS 2 ) show a high photoresponsivity of ≈880 A·W −1 , but their response time is rel atively long due to the long life time of their photocarriers, and their working wave length is limited to the visible spectrum due to the large bandgap of MoS 2 . [14,15] Considering the high carrier mobility inside graphene, [16,17] an effective method of building highperformance photodetectors is to interface gra phene with lightabsorbing materials, such as quantum dots, [18] perovskites, [19] TMDCs, [20] organic heterostructure, [21,22] sil icon, [23] etc. Among these graphenebased van der Waals (vdW) heterostructures, photodetectors consisting of only atomically thin 2D materials are particularly attractive for their possibility to form a sandwich structure for ultraflexible and highperfor mance electronic and optoelectronic applications. [24] However, these types of graphenebased devices consisting of only one layer of 2D crystals also suffer from the tradeoff between photo responsivity (R) and response time (τ). For example, graphene MoS 2 heterostructurebased photodetectors show enhanced photoresponsivity (≈5 × 10 8 A·W −1 ) at the expense of extremely slow response times (≈1 × 10 3 s). [20] The absence of an internal electric field within the lightabsorption layer can cause low photo carrierseparation efficiency, thus resulting in low quantum efficiency (QE) and relatively long response times (typically in the range of seconds, without gating pulses). [20] Although several strategies (e.g., the use of a ferroelectric sub strate [25] or a top transparent electrode [18] ) artificially introduce an external electric field to facilitate charge separation, these approaches are highcost and require complex fabrication pro cesses. Furthermore, most of these photodetectors display a Integrating 2D crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, the ability to produce complicated structures is limited by the challenges of chemical vapor deposition manufacturing. Here, a 2D-material heterostructure created on a fiber end-face is successfully demonstrated by integrating a microscale multilayer graphene-MoS 2 -WS 2 heterostructure film on it, using a simple layer-by-layer transferring method. The all-in-fiber photodetector (FPD) exhibits an ultra...

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Section: Resultsmentioning

confidence: 86%

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS₂‐WS₂ Heterostructure with a Synergetic Photogenerating Mechanism

Xiong

Chen

et al. 2018

Adv Elect Materials

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“…In order to combine the merits and complement the weaknesses of 2D materials, hybrid phototransistors based on 2D materials have been achieved with unprecedented performance . Zhang et al constructed a hybrid photodetector based on a graphene‐on‐MoS 2 heterostructure, with CVD‐monolayer MoS 2 as a sensitizer to absorb light and CVD‐monolayer graphene as the channel for carrier transport (Figure c).…”

Section: Strategies For Enhancing the Performance Of Photodetectorsmentioning

confidence: 99%

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

et al. 2018

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Graphene and graphene‐like 2D layered materials such as black phosphorus, transition‐metal dichalcogenides, oxides, chalcogenides, and so forth have attracted tremendous attention due to their unique crystal structures, mechanical, and physical properties, as well as their variable bandgaps that range from 0 to 6 eV, which have offered their utilization in versatile devices. Using these materials as the active channel, many novel electrical and optoelectronic devices have been reported. Among the various important devices applications, photodetectors based on 2D materials have been extensively investigated with varied performance due to the different species and detection mechanisms. Here, the methods to improve the performance of 2D‐material‐based photodetectors are reviewed. There are five kinds of strategies regarding methods, including surface plasmon enhancement, charge‐transfer assistance, optical‐waveguide integration, graphene sandwiched structures, and heterostructures directly grown by CVD, which are developed and widely reported in recent years. For each method, the device design, performance, and mechanism are introduced and discussed systematically. Finally, a summary is provided to afford the principle to further enhance the performance of photodetectors based on 2D materials, with a perspective for their practical applications in the future.

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“…Graphene is well known to provide a high carrier transport and is suitable for high‐speed photodevices . The 2D TMDCs heterostructures were vertically stacked onto graphene to improve the response speed and photoresponsivity . The WS 2 /graphene hybrid photodetector displayed a responsivity of 950 A W −1 and a rise time of 7.85 s .…”

Section: Introductionmentioning

confidence: 99%

“…The 2D TMDCs heterostructures were vertically stacked onto graphene to improve the response speed and photoresponsivity . The WS 2 /graphene hybrid photodetector displayed a responsivity of 950 A W −1 and a rise time of 7.85 s . The MoTe 2 /graphene near‐infrared photodetector showed a responsivity of 970.82 A W −1 at 1064 nm and a response rate of 78 ms .…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Photoresponsive Device Based on ReS₂/Graphene Heterostructure

Kang

Kim

Yoo

et al. 2018

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Heterostructures that combine graphene and transition metal dichalcogenides, such as MoS , MoTe , and WS , have attracted attention due to their high performances in optoelectronic devices compared to homogeneous systems. Here, a photodevice based on a hybrid van der Waals heterostructure of rhenium disulfide (ReS ) and graphene is fabricated using the stacking method. The device presents a remarkable ultrahigh photoresponsivity of 7 × 10 A W and a detectivity of 1.9 × 10 Jones, along with a fast response time of less than 30 ms. Tremendous photocurrents are generated in the heterostructure due to the direct bandgap, high quantum efficiency, and strong light absorption by the multilayer ReS and the high carrier mobility of graphene. The ReS /graphene heterostructured device displays a high photocurrent under the applied gate voltages due to the photogating effect induced by the junction between graphene and ReS . The ReS /graphene heterostructure may find promising applications in future optoelectronic devices, providing a high sensitivity, flexibility, and transparency.

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Highly responsive and broadband photodetectors based on WS₂–graphene van der Waals epitaxial heterostructures

Abstract: A WS2–graphene epitaxial heterostructure based photodetector showed a high responsivity and a broad response spectrum.

Cited by 115 publications

References 43 publications

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS₂‐WS₂ Heterostructure with a Synergetic Photogenerating Mechanism

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS₂‐WS₂ Heterostructure with a Synergetic Photogenerating Mechanism

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

Ultrahigh Photoresponsive Device Based on ReS₂/Graphene Heterostructure

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Highly responsive and broadband photodetectors based on WS2–graphene van der Waals epitaxial heterostructures

Abstract: A WS2–graphene epitaxial heterostructure based photodetector showed a high responsivity and a broad response spectrum.

Cited by 115 publications

References 43 publications

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS2‐WS2 Heterostructure with a Synergetic Photogenerating Mechanism

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS2‐WS2 Heterostructure with a Synergetic Photogenerating Mechanism

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

Ultrahigh Photoresponsive Device Based on ReS2/Graphene Heterostructure

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Highly responsive and broadband photodetectors based on WS₂–graphene van der Waals epitaxial heterostructures

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS₂‐WS₂ Heterostructure with a Synergetic Photogenerating Mechanism

Broadband Optical‐Fiber‐Compatible Photodetector Based on a Graphene‐MoS₂‐WS₂ Heterostructure with a Synergetic Photogenerating Mechanism

Ultrahigh Photoresponsive Device Based on ReS₂/Graphene Heterostructure