Highly self-oriented growth of (020) and (002) monoclinic HfO2 thick films using laser chemical vapor deposition

Matsumoto, Shogen; Kaneda, Yuko; Ito, Akihiko

doi:10.1016/j.ceramint.2019.09.156

Cited by 13 publications

(8 citation statements)

References 34 publications

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“…This result was consisted with our previous study on self-oriented growth of m-HfO 2 films using MOCVD. 16) In ZrO 2 25), 26) and HfO 2 , 27), 28) nucleation from vapor has frequently been attributed to stabilization of the tetragonal phase over the monoclinic phase without any stabilizer elements. Fig.…”

Section: Methodsmentioning

confidence: 99%

Precursor selection for metal–organic chemical vapor deposition of SrHfO3 films with Sr(dpm)2 and Sr(hfa)2

Fujie

Ito

2021

J. Ceram. Soc. Japan

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Section: Methodsmentioning

confidence: 99%

Precursor selection for metal–organic chemical vapor deposition of SrHfO3 films with Sr(dpm)2 and Sr(hfa)2

Fujie

Ito

2021

J. Ceram. Soc. Japan

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“…A higher Ea was determined in the range of 1250-1400 K for LCVD than for other methods. Akihiko Ito et al attributed this high Ea to the breakage of precursor bonds by laser phonons in LCVD [41]. Therefore, an increase in the number of active radicals over the growing surface increased Rdep.…”

Section: Methodsmentioning

confidence: 99%

High-Throughput Growth of HfO2 Films Using Temperature-gradient Laser Chemical Vapor Deposition

Liu

WANG

et al. 2021

Preprint

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The use of hafnia (HfO2) has facilitated recent advances in combining uprated dielectric layers (UDLs) and environmental barriers (EBs) in supercomputers. However, an extremely low deposition rate limits further development and fabrication efficiency of HfO2 films. In this study, high-throughput growth of HfO2 films was realized via laser chemical vapor deposition using a laser spot with a gradient temperature distribution. In HfO2 films fabricated by a single growth process, four regions with different morphologies could be discerned for deposition temperatures increasing from 1300 K to 1600 K: leaf-like, pyramid-like, bromeliad-like and pinecone-like. Two growth modes were observed for Regions I and II: Stranski-Krastanov and Volmer-Weber. Regions III and IV contained coexisting monoclinic and tetragonal HfO2 grains with an in-plane boundary for m-HfO2 (-110) {111}//t-HfO2 (1-11) {111}. The maximum deposition rate reached 362 μm/h, which was 102 - 104 times higher than that obtained using existing deposition methods.

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“…Laser-assisted metal-organic CVD is a rapid deposition process for functional thick films at a high deposition rate (10-300 μm h −1 ). (19)(20)(21) We previously reported transparent thick films of Eu 3+ -doped Lu 2 O 3 and Lu 3 Al 5 O 12 phosphors and Y 3 Fe 5 O 12 and SrFe 12 O 19 magneto-optic crystals. (22)(23)(24)(25) In the present study, we demonstrated the high-speed epitaxial growth of a Eu 3+ :Y 2 O 3 thick film phosphor.…”

Section: Introductionmentioning

confidence: 99%

Photo- and Radioluminescence Properties of Eu3+-doped Y2O3 Thick Film Phosphor Prepared via Chemical Vapor Deposition

Matsumoto¹,

Watanabe²,

Ito³

2022

Sensors and Materials

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We demonstrate the high-speed epitaxial growth of a Eu 3+ -doped Y 2 O 3 (Eu 3+ :Y 2 O 3 ) thick film phosphor grown on a (100) yttria-stabilized zirconia substrate by laser-assisted metalorganic CVD. The deposition rate was 42 μm h −1 and the resultant 7-μm-thick Eu 3+ :Y 2 O 3 film was optically transparent. Under UV and X-ray irradiation, the Eu 3+ :Y 2 O 3 thick film emitted red light originating from the 5 D 0 → 7 F 2 transition of Eu 3+ ions with a fluorescence decay time of 1.7 ms.

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Highly self-oriented growth of (020) and (002) monoclinic HfO2 thick films using laser chemical vapor deposition

Cited by 13 publications

References 34 publications

Precursor selection for metal–organic chemical vapor deposition of SrHfO<sub>3</sub> films with Sr(dpm)<sub>2</sub> and Sr(hfa)<sub>2</sub>

Precursor selection for metal–organic chemical vapor deposition of SrHfO<sub>3</sub> films with Sr(dpm)<sub>2</sub> and Sr(hfa)<sub>2</sub>

High-Throughput Growth of HfO2 Films Using Temperature-gradient Laser Chemical Vapor Deposition

Photo- and Radioluminescence Properties of Eu3+-doped Y2O3 Thick Film Phosphor Prepared via Chemical Vapor Deposition

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