Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 µm Synchrotron Radiation (SR) Lithography

Abstract

The scattering properties of the equatorial electrojet at a frequency of 21 Mc/s has been investigated. The results obtained suggest these nregularitles first occur when the electrojet current density is about 6.4 x A m-2. The corresponding drift velocity of the electrons is less than the mean thermal velocity of the ions. Thls situation does not favour the spontaneous formation of plasma waves, which is the mechanism suggested by Cohen and Bowles to account for the irregularities in the electrojet. The rapid and deep fading of the received signal suggest there are only a few scattering centres present which are moving at velocities of about 300 m sec-1. It is suggested that these scattering centres might be plasma waves with cylindrical wave fronts originating in the region of the electrojet which have been disturbed by the passage of meteors.

Recent progress in 1×x-ray mask technology: Feasibility study using ASET-NIST format TaXN x-ray masks with 100 nm rule 4 Gbit dynamic random access memory test patterns

“…Although resists for x-ray lithography need further improvement, commercially available KrF resists can be used for feasibility studies. 19 However, there has been concern that fabricating extremely precise 1ϫx-ray masks might prove to be too difficult compared to 4ϫoptical masks. Therefore, the major remaining issues in PXL are a high-performance electronbeam ͑EB͒ mask writer for 1ϫx-ray mask fabrication and highly accurate x-ray masks fabricated with the EB mask writer.…”

Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication

“…5) Furthermore, CA resists provide lithographic performance superior to that of traditional non-CA e-beam resists in particular respecting high contrast, resolution 6) and low film-stress. 7) Although CA resists with high sensitivity and low film-stress are attractive for improved throughput and image placement of the X-ray membrane mask, the CD control is difficult because of their strong dependence on a post-exposure bake (PEB) process. It is not enough for the CA resist on the membrane structure to obtain PEB temperature uniformity across ing hard mask chromium nitride (CrN) layer, TaX absorber layer, an etching stopper layer CrN layer, and the SiC membrane.…”

130 nm and 150 nm line-and-space critical-dimension control evaluation using XS-1 x-ray stepper

“…In this article, we report on CD control for 130 and 150 nm L/S patterns achieved with the new XS-1 x-ray stepper and two kinds of negative-tone resists: SAL606 6 and TDUR-N908. 5,7 …”