Highly transparent, ultra‐thin flexible, full‐color mini‐LED display with indium–gallium–zinc oxide thin‐film transistor substrate

Sun, Yangyang; Fan, Jack; Liu, Minggang; Zhang, Lijun; Jiang, Bei; Zhang, Min; Zhang, Xin

doi:10.1002/jsid.970

Cited by 21 publications

(11 citation statements)

References 32 publications

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“…The patterned IGZO TFT could be fabricated at low temperatures, coupling with the 60% transmittance rate and approximately 200 μm thickness of the full-color mini-LED display, making it more suitable for wearable devices, curved automotive, and other display applications. [63] 3.1. 4…”

Section: Novel Requisitesmentioning

confidence: 99%

Microdisplays: Mini‐LED, Micro‐OLED, and Micro‐LED

Miao

Hsiao

Sheng

et al. 2023

Advanced Optical Materials

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The field of next‐generation microdisplays is flourishing. Relevant display technologies, such as mini‐light emission diodes (mini‐LEDs), micro‐organic light emission diodes (micro‐OLEDs), and micro‐light emission diodes (micro‐LEDs) are thus in the urgent stage of development. From this perspective, comprehensive and systematical analyzes are conducted for the aforesaid microdisplay configurations. A holistic view of microdisplay technologies is developed with the corresponding performance metrics, providing a path for miscellaneous scenarios. Among these scenarios, the applications in augmented reality (AR), virtual reality (VR), wearable devices, and head‐up displays (HUD) are currently attracting considerable attention for deeper human‐digital interactions. However, there is a multiplicity of obstacles and challenges hindering such development. Nevertheless, recent advances in microdisplay technologies hold tremendous promise for the paradigms of these applications, taking a leap forward for next‐generation microdisplays. This review presents perspectives, relevant materials, and the technology landscape for such ongoing display technologies, offering guidance on the design of advanced microdisplays.

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Section: Novel Requisitesmentioning

confidence: 99%

Microdisplays: Mini‐LED, Micro‐OLED, and Micro‐LED

Miao

Hsiao

Sheng

et al. 2023

Advanced Optical Materials

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“…15 Conversely, the TFT backplane offers several advantages such as a large-area process, flexibility, excellent performance, and low cost. 16 Among the various TFT backplanes, low-temperature polycrystalline silicon (LTPS) TFTs have been used in driving highresolution mLEDs. Recently, Kim et al developed remarkably bright active-matrix mLEDs using the LTPS TFT backplane.…”

Section: Introductionmentioning

confidence: 99%

“…15 Conversely, the TFT backplane offers several advantages such as a large-area process, flexibility, excellent performance, and low cost. 16…”

Section: Introductionmentioning

confidence: 99%

Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors

et al. 2022

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“…[ 1–3 ] Improved device performance, higher transparency, simpler fabrication process, and even lower cost are demonstrated in IGZO TFTs compared with the traditional silica‐based TFTs. [ 4–6 ] Back‐channel etch (BCE) structure, [ 7–9 ] with relatively simple fabrication process accompanied with high light stability, acts as the mainstream configuration for TFTs. Whereas, TFTs fabricated in the BCE structure still suffer from ineffective electrical‐control ability, larger parasitic capacitance, and other side effects.…”

Section: Introductionmentioning

confidence: 99%

Self‐Alignment Embedded Thin‐Film Transistor with High Transparency and Optimized Performance

Zheng

et al. 2022

Adv Materials Technologies

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Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) have shown significant potential in the applications of increasingly advanced transparent and flexible electronic devices, where high speed, high transparency, and low power consumption are highly demanded. Yet, typical back‐channel etch (BCE) configuration used in the majority of TFTs still suffers from poor gate controllability, severe electrical field dispersion, relatively large parasitic capacitance and contact resistance. Here, a new embedded structure for TFTs with self‐alignment and even simpler fabrication process, outperforming conventional BCE counterpart in above aspects, is proposed in this work. More concentrated electrical field, improved gate control ability accompanied with lower contact resistance are achieved in the embedded TFTs. Consequently, superior electrical characteristics with subthreshold swing of 106.7 mV dec−1 and mobility as high as 32.10 cm2 V−1 s−1 are obtained. In addition, leakage current as well as contact resistance evidently decline compared to that in traditional BCE TFTs. By the assistance of Silvaco TCAD simulation, the performance and mechanism behind are cross‐validated from another perspective. Overall, such embedded configuration has equipped TFTs with appealing performance and it is also possible to enable other devices exploiting such structure with new possibility and thus a broader application.

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Highly transparent, ultra‐thin flexible, full‐color mini‐LED display with indium–gallium–zinc oxide thin‐film transistor substrate

Cited by 21 publications

References 32 publications

Microdisplays: Mini‐LED, Micro‐OLED, and Micro‐LED

Microdisplays: Mini‐LED, Micro‐OLED, and Micro‐LED

Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors

Self‐Alignment Embedded Thin‐Film Transistor with High Transparency and Optimized Performance

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