Highly tunable charge and spin transport in silicene junctions: phase transitions and half-metallic states

Mahdavifar, Maryam; Khoeini, Farhad

doi:10.1088/1361-6528/aac66f

Cited by 23 publications

(26 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Results of the FM band structure calculations are shown in Fig. 3, indicating a half-metallic behavior 59,60 , i.e metallic in the spin majority channel and semiconducting in the spin minority channel with a 0.4 eV indirect energy gap. In the spin majority channel atomic orbital characterizations show that similar to the NSP case, most of the f orbital states pin to the Fermi level in the energy range of −0.5 to 0.5 eV, showing noticeable mixture with the Ni-d orbitals.…”

Section: Resultsmentioning

confidence: 99%

Electronic structure of the PrNiBi half-Heusler system based on the σGGA + U method

Mikaeilzadeh

Tavana

Khoeini

2019

Sci Rep

Self Cite

View full text Add to dashboard Cite

In this works, we study the electronic structure and magnetic properties of the Pr-Ni-Bi half-Heusler systems based on density functional theory. We use the σ GGA + U scheme to consider the effects of on-site electron-electron interactions. Results show that in contrast to the rough estimation of the total magnetic moment of the unit cell, based on the Slater-Pauling behavior in the half-Heusler systems, this system has an antiferromagnetic ground state because of the localized Pr-f electrons. By increasing the magnitude of the effective U parameter, band-inversion occurs in the band structure of this system, which shows the possibility of topological state occurrence.

show abstract

Section: Resultsmentioning

confidence: 99%

Electronic structure of the PrNiBi half-Heusler system based on the σGGA + U method

Mikaeilzadeh

Tavana

Khoeini

2019

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…The electric field has been identified as one of the strategies to highly tune the bandgap of 2D structures and their derivatives [43]. In the following, the armchair-edged We show the band structure of the heterostructure in the absence of the transverse electric field and the presence of = 0.016 V/Å in figure 6(a)-(b), respectively.…”

Section: Bandgap Modification By Electric Fieldmentioning

confidence: 99%

“…is the hopping energy between sites and . The third term describes the transverse electric field effect, where denotes the electric field, which is applied to the system, as shown in figure 1, and is the vertical distance of atom from the bottom edge of the system [43].…”

Section: Tight-binding Modelmentioning

confidence: 99%

Tunable electronic properties and electric-field-induced phase transition in phosphorene/graphene heterostructures

Mahdavifar

Shekarforoush

Khoeini

2020

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical properties. Using the tight-binding approach and the Green's function method, we investigate the electronic properties of armchair-edged lateral phosphorene/graphene heterostructures, which are either semiconductor/semiconductor or semiconductor/metal heterostructures, depending on the width of graphene ribbon. It is found that the system is narrow-gapped, and the bandgap can be modulated by tuning the size of the domains. Besides, the analysis of the bandgap variation against the width of the component phosphorene ribbon indicates that, in semiconductor/metal heterostructure, phosphorene ribbon does not induce any electronic state near the Fermi level, suggesting that the suppressed electron transport should be attributed to the hole transfer across the interface. Furthermore, we show that the transverse electric field can significantly diversify the electronic behavior of the heterostructure, i.e., the heterostructure undergoes the semiconductor-metal phase transition. Moreover, tuning the transverse electric field yields an intriguing possibility that the system can undergo a topological phase transition from a band insulator to a topological insulator.

show abstract

“…is the Fermi-Dirac distribution function, and G r a ( ) is the surface retarded (advanced) Green function taking the boundary conditions into account [35], specific calculations for G r a ( ) is in appendix A. In the following discussion, we respectively set E a and E b in equations (9) and (10) as −30 and 30 meV.…”

Section: The Tight-binding Model Of Silicenementioning

confidence: 99%

“…Moreover, the silicene nanoribbons have been synthesized on silver (110) [32] and MoS 2 [33] surfaces. Compared with graphene, silicene has a significant advantage in the fabrication of a high-efficiency field-effect spin polarizer [30,34,35], where the output polarized current can be controlled by both spin and valley. Today, a field-effect silicene transistor has experimentally been realized by transferring silicene on a SiO p 2 ++ substrate using a specific growth-transfer-fabrication process at room temperature [36].…”

Section: Introductionmentioning

confidence: 99%

Spin current between the two different topological phases in the equilibrium system

Fan

2019

New J. Phys.

View full text Add to dashboard Cite

In this paper, we analyze the equilibrium spin current in a two-dimensional electron gas with a Rashba spin-orbit coupling at zero bias. Silicene has been successfully synthesized on a two-dimensional honeycomb lattice, and has some unique features due to its buckled structure. By applying the electric and exchange fields, various phases can be realized, such as valley polarized metal (VPM) phase, quantum anomalous Hall state and quantum spin Hall (QSH) state. Both VPM and QSH exhibit metalliclike behavior, we put two different phases in an infinite zigzag nanoribbon, even the weak inhomogeneity of the Rashba medium leads to spin current, and introduce how to control the output polarized current by tuning the electric and exchange fields. Furthermore, we define the concept of bond spin current, and plot the spatial distribution of microscopic spin current. In particular, spin vortex appears when the injected energy is close to the Fermi level, where spin current changes most violently. 3interface induces spin current in Pt, whose magnitude is proportional to magnetization in Cr O 2 3 [22]. Since the discovery of graphene, more researchers have dedicated to exploit the properties of twodimensional materials in order to develop faster and low-power electronic devices. The chiral of fermions in graphene can be used for the fabrication of valley electronic devices where one can control the valley flavor of the , which contains information of the steady-state local transport formalism on the tight-binding model. The decomposition of the bond spin current operator into kinetic and SO terms in equation (7) J J J 8

show abstract

Highly tunable charge and spin transport in silicene junctions: phase transitions and half-metallic states

Cited by 23 publications

References 48 publications

Electronic structure of the PrNiBi half-Heusler system based on the σGGA + U method

Electronic structure of the PrNiBi half-Heusler system based on the σGGA + U method

Tunable electronic properties and electric-field-induced phase transition in phosphorene/graphene heterostructures

Spin current between the two different topological phases in the equilibrium system

Contact Info

Product

Resources

About