Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform

Selvaraja, Shankar Kumar; Heyn, Peter De; Winroth, Gustaf; Ong, Patrick; Lepage, Guy; Cailler, Celine; Rigny, Arnaud; Bourdelle, K.K.; Bogaerts, Wim; Thourhout, Dries Van; Campenhout, Joris Van; Absil, P.

doi:10.1364/ofc.2014.th2a.33

Cited by 71 publications

(47 citation statements)

References 3 publications

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“…This enables flexibility in the layout of complex and highly integrated photonic circuits. In its basic form SOI-based silicon photonics provides passive components such as waveguides, splitters, wavelength filters, interferometers, resonators, polarization management devices and couplers to guide light in and out of the silicon chip [22], [27]- [29]. In its more advanced form, it provides advanced photonic functions such as high speed (40 Gb/s and beyond) modulators and monolithically integrated detectors [2]- [4].…”

Section: Silicon Photonics Platformsmentioning

confidence: 99%

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Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Rahim

Ryckeboer

Subramanian

et al. 2017

J. Lightwave Technol.

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276

158

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Abstract-The high index contrast silicon-on-insulator platform is the dominant CMOS 1 compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-oninsulator has some drawbacks for these emerging applications, e.g. silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented for these two material platforms.

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Section: Silicon Photonics Platformsmentioning

confidence: 99%

“…Fully etched SOI photonic wires -silicon strip waveguides -that are completely surrounded by a silica cladding -have a typical waveguide loss of ∼ 1.5 dB/cm for TE polarized light in the C-band [27]. Loss values of ∼ 0.7 dB/cm have been reported for partially etched rib waveguides.…”

Section: Waveguide Lossmentioning

confidence: 99%

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Rahim

Ryckeboer

Subramanian

et al. 2017

J. Lightwave Technol.

Self Cite

276

158

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“…Therefore, HIC only makes sense if the technology is capable of providing very smooth corecladding interfaces. In the case of silicon photonics, low-loss waveguides (<1 dB∕cm) have been demonstrated at 1550 nm wavelength [10]. Apart from that, high-quality PICs including passive components such as high-efficiency fiber-to-chip grating couplers, MMIs, and ring resonators, active components such as modulators, and hybrid III-V-on-silicon light sources have been demonstrated [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]

et al. 2015

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There is a rapidly growing demand to use silicon and silicon nitride (Si 3 N 4 ) integrated photonics for sensing applications, ranging from refractive index to spectroscopic sensing. By making use of advanced CMOS technology, complex miniaturized circuits can be easily realized on a large scale and at a low cost covering visible to mid-IR wavelengths. In this paper we present our recent work on the development of silicon and Si 3 N 4 -based photonic integrated circuits for various spectroscopic sensing applications. We report our findings on waveguide-based absorption, and Raman and surface enhanced Raman spectroscopy. Finally we report on-chip spectrometers and on-chip broadband light sources covering very near-IR to mid-IR wavelengths to realize fully integrated spectroscopic systems on a chip.

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“…This is because by using the well-developed CMOS tools and fabs of the microelectronics industry, high quality photonic integrated circuits (PICs) can be fabricated with extremely good process control and yield. State-of-the-art passive devices such as waveguides with losses < 1 dB/cm [1], and high efficiency grating couplers [2], (coupling loss < 2.5 dB/coupler), and active devices such as high-speed modulators [3], are already available on this platform. In spite of all these advantages silicon remains an indirect bandgap material and as a result light generation in silicon is a huge challenge.…”

Section: Introductionmentioning

confidence: 99%

Flip-chip assembly of VCSELs to silicon grating couplers via laser fabricated SU8 prisms

Kaur¹,

Subramanian²,

Cardile³

et al. 2015

Opt. Express

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This article presents the flip-chip bonding of vertical-cavity surface-emitting lasers (VCSELs) to silicon grating couplers (GCs) via SU8 prisms. The SU8 prisms are defined on top of the GCs using non-uniform laser ablation process. The prisms enable perfectly vertical coupling from the bonded VCSELs to the GCs. The VCSELs are flip-chip bonded on top of the silicon GCs employing the laser-induced forward transfer (LIFT)-assisted thermocompression technique. An excess loss of < 1 dB at 1.55 µm measured from the bonded assemblies is reported in this paper. The results of high speed transmission experiments performed on the bonded assemblies with clear eye openings up to 20 Gb/s are also presented.

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Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform

Abstract: Abstract:Using an advanced 300mm CMOS-platform, we report record-low and highly-uniform propagation loss: 0.45±0.12dB/cm for wires, and 2dB/cm for slot waveguides. For WDM devices, we demonstrate channel variation(3-σ) within-wafer and within-device of 6.1nm and 1.2nm respectively.

Cited by 71 publications

References 3 publications

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]

Flip-chip assembly of VCSELs to silicon grating couplers via laser fabricated SU8 prisms

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