HiSIM_IGBT2: Modeling of the Dynamically Varying Balance Between MOSFET and BJT Contributions During Switching Operations

Tone, A.; Miyaoku, Yosuke; Miura-Mattausch, Mitiko; Kikuchihara, Hideyuki; Feldmann, U.; Saito, Tomoya; Mizoguchi, T.; Yamamoto, Takao A.; Mattausch, Hans Jürgen

doi:10.1109/ted.2019.2919799

Cited by 2 publications

(5 citation statements)

References 29 publications

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“…Tichenor [17], A. Tone [18], and Jinlei Meng [19]. In reviewing the models, we found that those based on the ambipolar diffusion equation [2][3][4][5][6][7][8][9][10] are characterized by high accuracy and that convergence problems are seldom revealed after model refinement.…”

Section: Introductionmentioning

confidence: 99%

“…However, due to their complex modeling systems, when several models of transistors are required simultaneously, the modeling time increases when factory models are used, which can lead to frequent convergence problems [10,14]. In reviewing the simpler models, which mainly use the behavioral modeling principle based on semiconductor devices physics [11][12][13][14][15][16][17][18][19], we found that the most of these models are optimized for certain situations. It remains unclear how to get these models and optimize their parameters.…”

Section: Introductionmentioning

confidence: 99%

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A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

et al. 2021

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We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near the metal contact of the IGBT emitter, to better describe the dynamic characteristics of the transistor. A simplified model of the metal–oxide-semiconductor field-effect transistor (MOSFET) in the IGBT is used to simplify this IGBT model. The second simpler behavioral model could be used to model both IGBTs and MOSFETs. Model parameters are obtained from datasheets and then adjusted using results from a single measurement test. Modeling results are compared with measured turn-on and turn-off waveforms for different types of IGBTs. To check the validation of the models, a brushless DC electric motor test setup with an inverter was created. Despite the simplicity of the presented models, a comparison of model predictions with hardware measurements revealed that the model accurately forecasted switch transients and aided EMI–EMC investigations.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

et al. 2021

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“…Further, the highly resistive base region can sustain extremely high applied voltages. There are several compact models developed previously by different research groups, where the modeling focuses mainly on the functionally-active intrinsic part of the IGBT [13]- [17]. The IGBT modeling causes often numerical instabilities during circuit simulation, resulting from steep local-electric-field increases, which occur during switching predominantly within the base region.…”

Section: Introductionmentioning

confidence: 99%

“…For modeling the IGBT performance accurately, it has thus been demonstrated that both MOSFET and bipolar contributions must be accurately modeled on the basis of their physical origins. It has further been shown that the potential within the base region contributes in two different ways [17]. On one hand, it strongly controls the MOSFET features and on the other hand, an accurate baseregion-potential distribution is also essential for correct reproduction of the bipolar features.…”

Section: Introductionmentioning

confidence: 99%

“…On one hand, it strongly controls the MOSFET features and on the other hand, an accurate baseregion-potential distribution is also essential for correct reproduction of the bipolar features. Therefore, our previously developed compact IGBT model solves this key potential within the base region iteratively, to achieve the highest possible accuracy [15], [17]. It is our purpose in this investigation, to analyze the origin of the IGBT-specific features of the switching characteristics in more detail.…”

Section: Introductionmentioning

confidence: 99%

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Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Miyaoku

Tone

Matsuura

et al. 2020

IEEE J. Electron Devices Soc.

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The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

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HiSIM_IGBT2: Modeling of the Dynamically Varying Balance Between MOSFET and BJT Contributions During Switching Operations

Cited by 2 publications

References 29 publications

A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

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