History effects in anodic oxidation of Al-W alloys

Iglesias-Rubianes, L.; Skeldon, P.; Thompson, G.E.; Habazaki, H.; Shimizu, K.

doi:10.1080/01418610108214363

Cited by 12 publications

(4 citation statements)

References 21 publications

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“…The required level of enrichment for oxidation of a particular alloying element to take place can be modified by the presence of a second alloying element that may also be enriching. 10 Further, the enrichment in a particular alloy may be affected by the concentration of the alloying element, 11 the rate of oxidation, 12 and the history of the oxidation, 12 although with regard to such factors, the available information on their influences is limited.…”

Section: Discussionmentioning

confidence: 99%

“…However, previous studies of effects of changes in oxidation rate for Al-W alloys suggest an opposite change in rate would be required, i.e., from a low rate to a high rate. 12 The observation of flaws at boundary regions of stripped anodic films suggests a locally enhanced concentration of copper that is sufficient for oxidation of copper to proceed in association with generation of bubbles of oxygen gas within the anodic film. Such generation of oxygen, by oxidation of O 2Ϫ ions of the alumina, is found during anodizing of Al-Cu alloys.…”

Section: Discussionmentioning

confidence: 99%

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Behavior of Impurity and Minor Alloying Elements during Surface Treatments of Aluminum

Caicedo-Martinez

Королева

Skeldon

et al. 2002

J. Electrochem. Soc.

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The behavior of impurity and minor elements during electropolishing, chemical polishing, and anodizing treatments is examined for 99.99% Al and Al-0.2 atom % Mn alloy containing iron, copper, and silicon impurities in the parts per million range. Copper is enriched strongly, to at least 24×1014 copper atoms cm−2, during the two polishing treatments. Assuming that the copper is located in a metal layer of thickness 1 nm, just beneath the surface film, the enrichment corresponds to an average concentration of about 5 atom % copper. In contrast, iron and silicon impurities were not enriched significantly by the various treatments. Manganese was enriched in the Al-0.2 atom % Mn alloy to about 7×1014 atoms cm−2. Manganese appeared to interact with copper impurity in the alloy to reduce the level of copper enrichment. The factors determining the degree of enrichment include the Gibbs free energies per equivalent for formation of the various impurity and alloying element oxides, interactions between coenriching elements, and the location of the particular atoms in the metal, especially the proportions of the atoms in solid solution, in fine particulates, and segregated at cellular and grain boundaries. © 2002 The Electrochemical Society. All rights reserved.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Behavior of Impurity and Minor Alloying Elements during Surface Treatments of Aluminum

Caicedo-Martinez

Королева

Skeldon

et al. 2002

J. Electrochem. Soc.

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“…In particular, hydrogen is generated in corrosion processes 4,6 and during colouring treatments 1,10 and hydrogen impurity in the metal can accumulate at metal/oxide interfaces during anodizing. 19 Whether oxidation of aluminium atoms may also generate vacancies in the metal is uncertain. In the case of detachment during pitting of aluminium, 4 chloride ions are also present.…”

Section: Discussionmentioning

confidence: 99%

Detachment of alumina films from aluminium by 100 keV H⁺ ions

Liu

Alexander

Королева

et al. 2002

Surface & Interface Analysis

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Irradiation of aluminium covered by anodic oxide films 3-14 nm thick using 100 keV H + ions is shown to result in detachment of the oxide film. A dose of 6.6 × 10 16 H + ions cm −2 on a 6.5 nm thick film causes the removal of large pieces of oxide with dimensions at least 15 µm. Atomic force microscopy analysis shows that the location of the failure is within ∼1 nm of the metal/oxide interface. The large aspect ratio (width to thickness) of the detached pieces is thus ∼2000 : 1 and indicates that there is a disruption of the oxide bonding over large areas. The bombardment also results in the formation of blisters with diameters up to several hundred nanometres in the oxide, accompanied by shallow depressions, ∼5 nm deep in the underlying metal. The detachment is suggested to be associated with either condensation of vacancies generated in the metal by the H + ions or accumulation of hydrogen atoms deposited in the metal by the ion beam in the region of the metal/oxide interface. Although the beam energy and dose were expected to cause some disruption in the implanted material, the complete detachment of large areas of oxide was not anticipated. In fact, this appears to be the first time such gross detachment of an anodic film by H + ion irradiation has been reported.

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“…Instead Cr, Ti, Al and Mg have been observed to passivize copper surfaces [2,3]. Al-containing copper alloys have high corrosion resistance, and they have been widely used in several fields ranging from microelectronics to aerospace [29][30][31]6]. The results of refractory metal nitration of Cu thin films deposited on Si 2 O show that a protective layer can be formed by annealing either a Cu-(27 at.% Ti) or a Cu-(26 at.% Cr) alloys.…”

Section: Introductionmentioning

confidence: 99%