In this work, we improved the performance of perovskite solar cells (PSCs) by controlling the morphology of 2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) layers using a solvent vapor annealing method. We found that this technique could result in a smoother morphology of the spiro‐OMeTAD layer, which further improved the contacts at the perovskite/spiro‐OMeTAD and spiro‐OMeTAD/Au interfaces. Consequently, the power conversion efficiency (PCE) of PSCs improved from 14.62 to 16.73 % along with simultaneous enhancements of the open‐circuit voltage, short‐circuit current density, and fill factor. The hysteresis of the PSCs decreased significantly from 4.4 to 0.6 %. Moreover, the degradation in the PCE of the PSCs for long‐term storage was reduced from 19 to 14 % over the period of 144 hours. The best PSC based on a solvent vapor‐annealed spiro‐OMeTAD layer exhibited a high PCE of 17.15 % with a stable power output. Our results indicate that using solvent vapor annealing to control the morphology of spiro‐OMeTAD layers is an effective method for fabricating high‐performance PSCs.