Homoepitaxial growth of (0001)- and -oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

Smith, Thor L.; Mclean, H.; Smith, David J.; Davis, R. F.

doi:10.1016/j.jcrysgro.2004.02.096

Cited by 35 publications

(30 citation statements)

References 37 publications

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“…Note the logarithmic intensity scale and the FWHM value of only 23.4 arcsec. This value is lower than the FWHM of 31 arcsec reported by Ehrentraut [7] for homoepitaxial ZnO grown by LPE, and the 50 to 1050 arcsec reported for MOVPE films [2]. Only in [10], a lower FWHM of 17 arcsec was reported for a CVD grown film.…”

Section: Introductioncontrasting

confidence: 54%

“…The recently established ZnO homoepitaxy opens new possibilities to grow undoped and doped ZnO thin films with superior structural, optical and electrical performance [1][2][3][4][5][6][7][8][9][10][11][12]. However, up to now, the unsufficient surface quality and mosaicity [1,6,9] of the asreceived ZnO single crystals was one of the major obstacles for growth of high-quality homoepitaxial ZnO films.…”

Section: Introductionmentioning

confidence: 99%

“…However, up to now, the unsufficient surface quality and mosaicity [1,6,9] of the asreceived ZnO single crystals was one of the major obstacles for growth of high-quality homoepitaxial ZnO films. First attempts to grow homoepitaxial films by metallorganic vapor-phase epitaxy (MOVPE) resulted in tilted domains with a wide range of full widths of half maximum (FWHM) of the ZnO(00.2) X-ray diffraction (XRD) rocking curves from less than 50 up to more than 1050 arcsec as mapped over a 2-inch wafer [2]. Thermal annealing of melt-grown substrates was investigated by Ko et al [3] and an optimum treatment temperature around 1000 °C was found by atomic force microscopy (AFM) and XRD.…”

Section: Introductionmentioning

confidence: 99%

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Homoepitaxial ZnO thin films by PLD: Structural properties

Lorenz

Wagner

Rahm

et al. 2008

Phys. Status Solidi (c)

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Homoepitaxial ZnO films deposited on annealed hydrothermal O‐face ZnO single crystals show superior structural quality. This is demonstrated by narrow ZnO(00.2) rocking curves with FWHM of typically 23 to 35 arcsec, and nearly dislocation‐free TEM cross sections. Nominally undoped ZnO films indicate a minor in‐plane strain of about 250 ppm and no out‐of‐plane strain. Target doping by 0.01% P2O5 or 0.5% Li3N results in pseudomorphic film growth without in‐plane strain. Increasing doping concentration of 0.1 and 1% P2O5 results in both in‐plane and out‐of‐plane strain up to 0.9% indicating relaxed films. The O‐face polarity of the homoepitaxial ZnO films is confirmed by convergent beam electron diffraction. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductioncontrasting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Homoepitaxial ZnO thin films by PLD: Structural properties

Lorenz

Wagner

Rahm

et al. 2008

Phys. Status Solidi (c)

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“…Moreover, they were never observed in homoepitaxial ZnO films. 41 It is now believed that the cones were produced by fracture events that occurred on cooling due to the differences in the coefficients of thermal expansion between the GaN/AlN/SiC substrates and the ZnO films. A high density of threading dislocations populated all ZnO films, as shown in the TEM micrograph in Fig.…”

Section: Resultsmentioning

confidence: 99%

Growth and characterization of ZnO thin films on GaN epilayers

Smith

Mclean

Smith

et al. 2004

Journal of Elec Materi

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Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O 2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.

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“…[1][2][3][4][5][6][7][8][9][10][11] Mostly the structural and morphological properties have been discussed. Although the quality of ZnO substrates still needs to be improved, in most cases considerably improved properties of homoepitaxial ZnO thin films compared to heteroepitaxial ZnO layers (mostly on sapphire and SCAM substrates) are found.…”

Section: Introductionmentioning

confidence: 99%

Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

Lajn

Wenckstern

Benndorf

et al. 2009

Journal of Elec Materi

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Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 9 10 À4 -0.1 mbar) were investigated with respect to shallow donors and compensation. From x-ray diffraction and photoluminescence studies, a correlation of the oxygen partial pressure and the strain in the samples was found. Capacitance-voltage and thermal admittance measurements, using PtO x -Schottky diodes, revealed a higher compensation for increasing oxygen partial pressure. A shallow donor level with a thermal activation energy of $40 meV was observed by thermal admittance spectroscopy. This defect level was attributed to the I 3a transition observed in photoluminescence and commonly assigned to interstitial zinc.

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Homoepitaxial growth of (0001)- and -oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

Cited by 35 publications

References 37 publications

Homoepitaxial ZnO thin films by PLD: Structural properties

Homoepitaxial ZnO thin films by PLD: Structural properties

Growth and characterization of ZnO thin films on GaN epilayers

Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

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