Hopping conduction in semiconducting diamond

Massarani, B.; Bourgoin, J. C.; Chrenko, R. M.

doi:10.1103/physrevb.17.1758

Cited by 115 publications

(72 citation statements)

References 36 publications

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“…respectively, 17,18 we find that R ffi 8 nm at 300 K and x ¼ 0.42 eV. This latter value is in agreement with the value of 0.41 eV of the Fermi level located below the conduction band.…”

supporting

confidence: 88%

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

Berencén

Ramírez

Jambois

et al. 2012

Journal of Applied Physics

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Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO2 Appl. Phys. Lett. 101, 073506 (2012) Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metaloxide-semiconductor capacitor J. Appl. Phys. 112, 034514 (2012) The one-dimensional Coulomb lattice fluid capacitor J. Chem. Phys. 137, 064901 (2012) A capacitor-loaded cylindrical resonant coil with parallel connection Appl. Phys. Lett. 101, 064105 (2012) Four-dimensional spectral low-loss energy-filtered transmission electron tomography of silicon nanowire-based capacitors Appl. Phys. Lett. 101, 063108 (2012) Additional information on J. Appl. Phys.

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“…respectively, 17,18 we find that R ffi 8 nm at 300 K and x ¼ 0.42 eV. This latter value is in agreement with the value of 0.41 eV of the Fermi level located below the conduction band.…”

supporting

confidence: 88%

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

Berencén

Ramírez

Jambois

et al. 2012

Journal of Applied Physics

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“…We present here the first results of such a spectroscopic investigation and compare them to preliminary Hall effect and conductivity measurements on the same samples as well as to published transport data for implanted [3], synthetic [4] or CVD-grown polycrystalline [5][6][7] diamond. We shall focus on a boron concentration range (2 Â 10 20 cm --3 < [B] < 2 Â 10 21 cm --3 ) close to the critical value leading to the metal-insulator transition in this system.…”

Section: Introductionmentioning

confidence: 97%

Optical Conductivity Studies in Heavily Boron-Doped Diamond

Bustarret

Pruvost

Bernard

et al. 2001

phys. stat. sol. (a)

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Subject classification: 78.30.Am; 78.66.Db; S5The optical transmittance and reflectance of heavily boron-doped (2 Â 10 20 cm --3 < [B] < 2 Â 10 21 cm --3 ) epitaxial diamond layers deposited by MPCVD were measured in the infrared range. While T-dependent measurements confirmed the metallic character of such films, the overall spectral features were well reproduced by introducing Drude components in the fitting expression for the optical conductivity. The associated microscopic transport parameters were quantitatively compared to those resulting from preliminary transport measurements performed on the same samples. We show that room-temperature FTIR reflectance measurements provide an easy contactless characterization of the transport properties of such p + films, and we discuss what new information on carrier-phonon interaction as well as on the transport mechanism in the impurity band might be gained from temperature-dependent spectroscopic data.

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“…At low temperatures or at boron concentrations <10 17 cm -3 conduction occurs through holes in the valence band contributed by ionised substitutional B. At higher doping levels, conduction occurs by nearest-neighbour and variable range hopping of holes between ionised B sites [2], accompanied by a drop in mobility [3]. At very high doping levels, an impurity band is formed, giving rise to metal-like conductivity.…”

Section: Introductionmentioning

confidence: 99%

Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

et al. 2007

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We present data showing how the electrical conductivity and Raman spectra of boron doped 'cauliflower'-type nanocrystalline (c-NCD) CVD diamond films vary as a function of B content. The conductivity is roughly linear as a function of B content between an onset threshold of ~5×10 20 cm -3 up to ~6 ×10 21 cm -3, with the higher concentrations giving near metallic conductivity values. The onset threshold may be due to compensating donors due to the large number of impurities and defects in these films. The position of the Lorentzian contribution to the 500 cm -1 Raman feature was used to estimate the B content and compared to the value measured using SIMS. We found that the Raman method overestimated the concentration of B by a factor of ~5 for these c-NCD films. The shortfall may be explained if only a small fraction of the B found in the small-grained films is being incorporated into substitutional sites. We conclude that in diamond films with a high concentration of grain boundaries, the majority of the B (80% in some cases) must be present at or in the grain boundaries.

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Hopping conduction in semiconducting diamond

Cited by 115 publications

References 36 publications

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

Optical Conductivity Studies in Heavily Boron-Doped Diamond

Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

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