Hopping mobility in semiconductor superlattices

Palmier, J.F.; Person, H. Le; Minot, C.; Chomette, A.; Regreny, A.; Calecki, D.

doi:10.1016/0749-6036(85)90031-x

Cited by 42 publications

(7 citation statements)

References 9 publications

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“…A similar transition is observed in amorphous silicon [21]. Vertical hole transport in region (3) occurs instead via phonon-assisted hopping transport between adjacent localized states [1,2,9,[24][25][26]. In this case, ε 3 is the hopping activation energy [21,23].…”

Section: Discussionmentioning

confidence: 57%

Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors

et al. 2017

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Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-bandgap InAs/InAs 1-x Sb x type-II superlattices (T2SLs). Vertical hole mobilities (µ h) are reported and found to decrease rapidly from 360 cm 2 /V-s at 120 K to ≈ 2 cm 2 /V-s at 30 K, providing evidence that holes are confined to localized states near the T2SL valence miniband edge at low temperatures. Four distinct transport regimes are identified: (1) pure miniband transport, (2) miniband transport degraded by temporary capture of holes in localized states, (3) hopping transport between localized states in a mobility edge, and (4) hopping transport through defect states near the T2SL valence miniband edge. Region (2) is found to have a thermal activation energy of ε 2 = 36 meV, corresponding to the energy range of a mobility edge. Region (3) is found to have a thermal activation energy of ε 3 = 16 meV, corresponding to the hopping transport activation energy. This description of vertical hole transport is analogous to electronic transport observed in disordered amorphous semiconductors displaying Anderson localization. For the T2SL, we postulate that localized states are created by disorder in the group-V alloy of the InAs 1-x Sb x hole well causing fluctuations in the T2SL valence band energy.

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Section: Discussionmentioning

confidence: 57%

Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors

et al. 2017

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“…In this case the conduction may proceed by phonon-assisted tunneling between adjacent layers (hopping conduction) [47]. Both calculations [48] and conductivity measurements [49] have, however, confirmed the very low mobility for this transport mechanism inconsistent with the fast temporal response of the SLPD. We therefore believe that the photo generated carriers are emitted out of the quantum wells to the continuum of states above the potential barriers and subsequently travel a mean free path before being recaptured by one of the wells.…”

Section: Theory Of Phonon Assisted Tunnelingmentioning

confidence: 94%

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Larsson

Andrekson

Eng

et al. 1988

IEEE J. Quantum Electron.

105

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Abstract-We report on extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage tunable superlattice p-i-n photodetectors in a waveguide configuration. This includes a reduced wavelength spacing, an investigation of the polarization dependence of the crosstalk and bit-error-rate measurements for various crosstalk levels. We show that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gbit/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mbits/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. The paper includes a theory for the emission of photogenerated carriers out of the quantum wells since this is potentially a speed limiting mechanism in these detectors. We show that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

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“…In contrast, Bloch transport through the superlattice would be expected to become slower as the temperature is raised, with the mobility being limited by phonon scattering. 15 We note that recent measurements of g in mid-infrared ͑ ϳ 4 -5.5 m͒ QCLs ͑Ref. 16͒ have shown the presence of Bloch transport.…”

Section: B Time-resolved Measurementsmentioning

confidence: 99%

Gain recovery dynamics of a terahertz quantum cascade laser

et al. 2009

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The gain recovery time of a bound-to-continuum terahertz quantum cascade laser is measured using a stimulated emission photocurrent technique. At low temperatures a value ϳ50 ps is found. This tends to decrease with rising temperature, and suggests that class B laser dynamics should be expected from these devices. Both the value and the trend in the gain recovery time are found to be consistent with hopping transport through the miniband. Power-dependent measurements of the photocurrent clearly show the effects of inhomogeneous broadening of the gain transition.

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Hopping mobility in semiconductor superlattices

Cited by 42 publications

References 9 publications

Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors

Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Gain recovery dynamics of a terahertz quantum cascade laser

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