Hot carrier energy loss rates in GaInAs/InP quantum wells

Westland, D.J.; Ryan, J.F.; Scott, Michael; Davies, J. I.; Riffat, J.R.

doi:10.1016/0038-1101(88)90311-5

Cited by 45 publications

(11 citation statements)

References 12 publications

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“…As shown in Fig. 7, preliminary computations show that at the illumination level used for the experiments in [4,5] -equivalent to about 2500 suns -efficiencies of 50% could be achievable in a 1 eV band gap material with thermalisation properties only 10 times better than those of GaAs [15,16]. This is in spite of thermal losses in state of the art materials such as the multiple-QW structures considered.…”

Section: Tentative Predictions Of Hot Carrier Cell Efficienciesmentioning

confidence: 89%

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Slowing of carrier cooling in hot carrier solar cells

et al. 2008

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Section: Tentative Predictions Of Hot Carrier Cell Efficienciesmentioning

confidence: 89%

“…Slowed carrier cooling in QW superlattices has been demonstrated experimentally [4,5] and is described as an enhancement of the phonon bottleneck effect. Some of the current authors describe the potential for an increased effect in QD superlattices in [6][7][8][9], as discussed below.…”

Section: Slowed Carrier Coolingmentioning

confidence: 97%

Slowing of carrier cooling in hot carrier solar cells

et al. 2008

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“…[4][5][6][7][8][9][10][11][12][13][14][15][16] Operation in a solar cell having constituents at several temperatures obeys a slightly different physics as compared to standard devices. Two supplementary effects need to be taken into account: heat flows between the various temperature reservoirs (quantified by the thermalization rates) and coupled particle and thermal flows (as in Seebeck and Peltier effects).…”

mentioning

confidence: 99%

Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

Rodière

Lombez

Corre

et al. 2015

Applied Physics Letters

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International audienceWe investigated a semiconductor heterostructure based on InGaAsP multi quantum wells (QWs) using optical characterizations and demonstrate its potential to work as a hot carrier cell absorber. By analyzing photoluminescence spectra, the quasi Fermi level splitting Dl and the carrier temperature are quantitatively measured as a function of the excitation power. Moreover, both thermodynamics values are measured at the QWs and the barrier emission energy. High values of Dl are found for both transition, and high carrier temperature values in the QWs. Remarkably, the quasi Fermi level splitting measured at the barrier energy exceeds the absorption threshold of the QWs. This indicates a working condition beyond the classical Shockley-Queisser limit

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“…One sample was exposed purely to an As flux during the interrupt (sample C), GaAs, making it an excellent candidate system for use in a hot carrier solar cell. The use of GaAs based nanostructures in the absorber also may satisfy the need to slow the cooling rate of carriers as GaAs/lnGaAs superlattices have displayed the phonon bottleneck effect [10). The number of contacts is of critical importance to the operation of the hot carrier solar cell [11) with the observed number density of InAs aDs on AlAs being in the optimal range of 10 11 _10 12 cm-2 [12).…”

Section: Methodsmentioning

confidence: 99%