Hot-electron trapping activation energy in PMOSFET's under mechanical stress

Hamada, A.; Takeda, Eiji

doi:10.1109/55.289471

Cited by 21 publications

(22 citation statements)

References 5 publications

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“…3. 9,[22][23][24] This affects the stability of interface traps, resulting in a change in T . 24 In P b0 center, compressive stress along ͓110͔ decreases bond angle ⍜ 1 and increases the other bond angle ⍜ 2 , due to ͑1͒ ͑100͒ Si substrate surface structure and ͑2͒ dangling bond along the ͓111͔ direction.…”

Section: Impact Of Mechanical Stress On Direct and Trap-assisted Gatementioning

confidence: 99%

Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors

Choi

Nishida

Thompson

2008

Applied Physics Letters

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Section: Impact Of Mechanical Stress On Direct and Trap-assisted Gatementioning

confidence: 99%

Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors

Choi

Nishida

Thompson

2008

Applied Physics Letters

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“…A stress-induced change in the total interface charge may arise if the activation energy of interface charge traps depends on stress [27], and will correspond to a change in the surface Fermi energy E F s . Via the requirement for charge neutrality this changes the width (W ) of the surface depletion layer.…”

mentioning

confidence: 99%

Geometric and chemical components of the giant piezoresistance in silicon nanowires

McClarty

Jegenyés

Gaudet

et al. 2016

Applied Physics Letters

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A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentration, electrostatic field effects, or surface chemistry. Here, we observe all these PZR behaviors in a single set of nominally p-type, ⟨110⟩ oriented, top-down SiNWs at uniaxial tensile stresses up to 0.5 MPa. Longitudinal π-coefficients varying from −800 × 10−11 Pa−1 to 3000 × 10−11 Pa−1 are measured. Micro-Raman spectroscopy on chemically treated nanowires reveals that stress concentration is the principal source of giant PZR. The sign and an excess PZR similar in magnitude to the bulk effect are related to the chemical treatment of the SiNW

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“…The extracted activation energy E a of the compressive-strained device (angle from linear fit at Arrhenius plot of device) is 0.06 eV. However, this value is lower than that of the control device (E a = 0.30 eV) because the Si-H or Si−SiO 2 interface dangling bonds are distorted by the mechanical stress, resulting in E a lowering [14]. By the high-pressure D annealing, E a of the control device is decreased to 0.13 eV, but the compressivestrained device has increased E a to about 0.28 eV.…”

Section: Characterization Of Annealing Effectmentioning

confidence: 84%

High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices

Cho

Lee

Chang

et al. 2008

IEEE Trans. Device Mater. Relib.

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High-pressure deuterium annealing was applied to nanoscale strained CMOS devices, and its effect was characterized in terms of charge pumping method, hot-carrier-induced stress, negative bias temperature instability stress, and 1/f noise for the first time. For the NMOS, the characteristics of both control and tensile-stressed NMOS devices were improved by annealing; in particular, tensile-stressed NMOS devices had more improved characteristics than the characteristics of control devices. However, for the PMOS, compressive-stressed PMOS devices particularly had more degraded characteristics compared with the characteristics of control PMOS devices.Index Terms-Charge pumping, CMOS, deuterium (D) annealing, high pressure, hot carrier stress, nanoscale, negative bias temperature instability (NBTI) stress, strained, 1/f noise.

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Hot-electron trapping activation energy in PMOSFET's under mechanical stress

Cited by 21 publications

References 5 publications

Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors

Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors

Geometric and chemical components of the giant piezoresistance in silicon nanowires

High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices

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