How to fabricate a defect free Si(001) surface

Abstract

We demonstrate the successful fabrication of an almost defect free Si͑001͒ surface by refining the standard annealing and flashing surface preparation method. On any desired samples, we can routinely fabricate a surface with defect densities lower than 0.1%, significantly reducing the defect density compared to surfaces fabricated by standard methodology.

RAS: An efficient probe to characterize Si(001)-(2×1) surfaces

“…Three flashes were necessary to ensure the total removal of the oxide layer and get a maximum of anisotropic signal. No cautions were used to cool down the sample since the crucial point to obtain a surface free of defects, is the pressure during the annealing [17]. The single domain nominal surface is obtained by gradually heating the sample to 1050°C by a direct current through the sample along the [110] direction.…”

Theoretical investigations on CH2CH–CH2OH on the Si(100)-2×1 and Ge(100)-2×1 surfaces

“…doi:10.1016/j.susc.2005.04.050 surface dimer. Each surface dimer contains a strong r bond and a weak p bond [12], bestowing their structurally and electronically similar to the Si@Si bonds of disilenes. Therefore, these dimers may possess some possible similarities of classic alkenes from organic chemistry.…”

Split-off dimer defects on theSi(001)2×1surface

“…However, the density of defects, including splitoff dimer defects, was found to increase over time with repeated sample preparation and STM imaging, as reported previously. 13 It is known that split-off dimer defects are induced on the Si(001) surface by the presence of metal contamination such as Ni, 14 and W 15 . The appearance of these defects in our samples therefore points to a build up of metal contamination, either Ni from invacuum stainless steel parts, or more likely W contamination from the STM tip.…”