How to Locate Resistance VIA by Analysing Schematic Combined with EMMI Result on Integrated Circuit Failed at Cold Temperature

Wen, Gaojie; Liu, Tian; Li, Jinglong; Qi, Changyan; Wang, Dong

doi:10.31399/asm.cp.istfa2015p0270

Cited by 3 publications

(1 citation statement)

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“…Therefore, there was more charge flow in the body substrate, which was more easily recombined with the majority carriers from the body of the MOSFET. The light emission intensity was strongly coupled to the amount of the recombination and thus the InGaAs photon emission method showed emission spot at the MOSFET area [15,16]. By layout analysis, the abnormal emission spot was possibly due to the incorrect pre-stage signal input for the MOSFET.…”

Section: Extra Ingaas Photon Emission Spotmentioning

confidence: 99%

Open circuit defect positioning method based on dynamic photon emission microscopy and schematic analysis for mixed signal IC on SOI

Lan¹,

Wen²,

Wei³

et al. 2022

J. Phys. D: Appl. Phys.

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Failure analysis (FA) was encountered ion charging risk when using focused ion beam (FIB) to insert extra test pads for mixed signal integrated circuits (IC) on silicon-on-insulator (SOI). To overcome this challenge and to precisely locate the open circuit defect, this paper described an effective non-destructive FA method based on dynamic InGaAs photon emission microscopy and schematic/layout analysis to determine the open circuit type and position. Nano-probing and electron beam absorbed current (EBAC) was used to located the precise location of the open circuit defect. Two typical samples of mixed signal IC on SOI were used as examples (Sample 1 and 2, with extra and missing emission spots, respectively) to illustrate the analysis procedure and effectiveness for the proposed method. Scanning electron microscope (SEM) results were presented to verify the accuracy of this method. It was demonstrated that the proposed method was able to accurately determine failure of open circuit efficiently without microprobe for mixed signal IC on SOI.

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Section: Extra Ingaas Photon Emission Spotmentioning

confidence: 99%