HV GaN reliability and status

Khalil, Sameh; Hardikar, S.; Sack, Steffen; Persson, Eric; Imam, Mohamed A.; McDonald, Tim

doi:10.1109/wipda.2015.7369307

Cited by 11 publications

(4 citation statements)

References 1 publication

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“…A final issue, as outlined in Section VI, relates to the reliability of the PSDs. Methodologies to ensure reliable WBG products were proposed and reported in the literature [7] and discussed in WBG and reliability conferences and workshops. For GaN-based power devices, time-dependentdielectric-like breakdown, dynamic ON-state resistance due to trapping effects, and hard switching are among the key topics that are currently in focus by the research and development community.…”

Section: Overview Of Wide/ultrawide Bandgap Powermentioning

confidence: 99%

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Mazumder

Voss

Dowling

et al. 2023

IEEE J. Emerg. Sel. Topics Power Electron.

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This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.

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Section: Overview Of Wide/ultrawide Bandgap Powermentioning

confidence: 99%

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Mazumder

Voss

Dowling

et al. 2023

IEEE J. Emerg. Sel. Topics Power Electron.

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“…The reliability of GaN devices is under current investigation. Results in [94] and [95] promise a high reliability of GaN devices under hard environmental conditions. Commercially available 650 V devices are qualified according to the JEDEC Solid State Technology Association (JEDEC) tests including 1000 hours of high temperature reverse bias [96].…”

Section: B Reliability and Safetymentioning

confidence: 99%

Discussion on Electric Power Supply Systems for All Electric Aircraft

et al. 2020

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The electric power supply system is one of the most important research areas within sustainable and energy-efficient aviation for more-and especially all electric aircraft. This paper discusses the history in electrification, current trends with a broad overview of research activities, state of the art of electrification and an initial proposal for a short-range aircraft. It gives an overview of the mission profile, electrical sources, approaches for the electrical distribution system and the required electrical loads. Current research aspects and questions are discussed, including voltage levels, semiconductor technology, topologies and reliability. Because of the importance for safety possible circuit breakers for the proposed concept are also presented and compared, leading to a initial proposal. Additionally, a very broad review of literature and a state of the art discussion of the wiring harness is given, showing that this topic comes with a high number of aspects and requirements. Finally, the conclusion sums up the most important results and gives an outlook on important future research topics. INDEX TERMS Aviation, aerospace electronics, MEA, AEA, electric power supply systems, dc-dc power converters, power semiconductor devices, wide bandgap semiconductors, high voltage direct current (HVDC), circuit breaker, hybrid circuit breaker.

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“…Texas Instruments is also following a similar approach to adapt the standard Si JEDEC testing methodology to GaN HEMTs, used in hard-switched power converters [10]. Multiple research groups are focusing on developing the reliability requirements for GaN HEMTs used in automotive applications and high voltage applications [11], [12].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies

Matei

Urbonas²,

Votsi

et al. 2020

IEEE Trans. Power Electron.

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For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This paper presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high electron mobility transistor. The submicron spatial and nanosecond temporal resolutions of the measurement system enables for the first time, the dynamic temperature measurement of a transistor operating up to 5 MHz. The GaN transistor is first biased in class-A and excited with a 1 MHz AC signal to demonstrate the dynamic temperature measurement. The transistor is then incorporated in a 20-40 V DC/DC boost converter to measure the dynamic temperature distributions across the semiconductor die operating under real loading conditions at 1 and 5 MHz switching frequencies. This technique captures the temperature variations that occur during the switching of the transistor and the recorded peak temperatures are 7.4 C higher compared with conventional measurement and simulation approaches. Index Terms-Thermoreflectance measurement, boost converter, gallium nitride, power transistor.

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HV GaN reliability and status

Cited by 11 publications

References 1 publication

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Discussion on Electric Power Supply Systems for All Electric Aircraft

Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies

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