Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Mazumder, Sudip K.; Voss, Lars F.; Dowling, Karen M.; Conway, A. M.; Hall, David L.; Kaplar, Robert; Pickrell, Gregory; Flicker, Jack; Binder, Andrew; Chowdhury, Srabanti; Veliadis, Victor; Luo, Fang; Khalil, Sameh; Aichinger, Thomas; Bahl, S.R.; Meneghini, Matteo; Charles, Alain B.

doi:10.1109/jestpe.2023.3277828

Cited by 17 publications

(6 citation statements)

References 141 publications

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“…The latter were in the range of 7.1-7.8 mΩ•cm 2 for the as-deposited devices and were relatively unaffected by annealing up to 300 • C. At higher temperatures, the R ON was degraded for both types of anneals, due to the increase in resistivity of the NiO and the degraded metal in the case of annealing with the Ni/Au in place. Note the large increase in the low-bias forward current for annealing at or above 400 • C, which is consistent with the increase in recombination centers in the heterojunction [3,[30][31][32]. 500 ℃ 0.63 >10 3.74 5.96 0.989…”

Section: Resultssupporting

confidence: 58%

“…At higher temperatures, the RON was degraded for both types of anneals, due to the increase in resistivity of the NiO and the degraded metal in the case of annealing with the Ni/Au in place. Note the large increase in the low-bias forward current for annealing at or above 400 °C, which is consistent with the increase in recombination centers in the heterojunction [3,[30][31][32]. The turn-on voltages were derived from the linear plots of the forward current density as a function of voltage and are shown in Figure 3.…”

Section: Resultssupporting

confidence: 55%

“…The annealing temperature in this study was chosen based on previous studies that have shown that NiO/Ga 2 O 3 rectifiers exhibit an optimal performance at around 300 • C. There is no significant change in the crystalline quality, carrier density, or mobility for annealing up to 500 • C [31][32][33][34][35][36], which is the temperature used in our experiments. At slightly higher temperatures, there can be changes in the metal contacts used on the device structure and in the NiO layers.…”

Section: Discussionmentioning

confidence: 99%

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Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers

Wan

Chiang

et al. 2023

Crystals

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The stability of vertical geometry NiO/Ga2O3 rectifiers during two types of annealing were examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal anode stack, and (2) the annealing of the completed device. The devices were annealed in oxygen for 1 min at a temperature of up to 500 °C. The results show that annealing at 300 °C can lead to the best performance for both types of devices in terms of maximizing the breakdown voltage and on–off ratio, lowering the forward turn-on voltage, reducing the reverse leakage current, and maintaining the on resistance. The surface morphology remains smooth for 300 °C anneals, and the NiO exhibits a bandgap of 3.84 eV with an almost unity Ni2O3/NiO composition.

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Section: Resultssupporting

confidence: 58%

Section: Resultssupporting

confidence: 55%

Section: Discussionmentioning

confidence: 99%

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Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers

Wan

Chiang

et al. 2023

Crystals

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“…This is where the HEMT device is used, a device that can provide high electron concentration in the form of 2DEG without the requirement for large extrinsic doping. A HEMT device exploits properties of heterostructures, causing electrons in the lattice to sweep towards the heterointerface [30]. Essentially, due to the non-centrosymmetric structure of the materials chosen for HEMT design, a net dipole moment is present due to the difference in electronegativity between the atoms constituting to the lattice structure.…”

Section: Structural Description and Materials Selectionmentioning

confidence: 99%

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Nandi,

Dubey,

Kumar

et al. 2024

Eng. Res. Express

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This work proposes a new 100 nm InP based InGaAs-InAs-InGaAs composite channel HEMT for millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides superior electron confinement in the channel, enhancing 2DEG concentration and hence, mobility and speed of the proposed device. We achieve a unity current gain frequency (fT) of 248.9 GHz and a maximum oscillation frequency (fMAX) of 523.9 GHz with a current gain of 67.7 dB at 0.1 GHz. Off-state leakage current is in the nanoampere range with minimum noise figure (NFMIN) of only 0.76 dB at 10 GHz. We compare the DC and RF performance and the associated parasitics of different composite channel HEMTs proposed in latest works and mathematically justify why InGaAs-InAs-InGaAs channel HEMTs provide the highest fTand fMAX. InGaAs-InAs-InGaAs channel HEMTs provide 1.4 times better fTand fMAX with only half the NFMINof their InGaAs-InP-InGaAs channel counterparts. A frequency dependent intrinsic FET model is put forward for the proposed HEMT which allows us to model the behavior of the device under varying RF conditions and identify the effect of individual parameters on the entire system.

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“…HOTOCONDUCTIVE semiconductor switches (PCSSs) have an attractive application with the characteristic of fast response, low switch jitter, and high power [1], [2], which has been widely used in ultra-fast electronics (ps/THz), power microwave/RF sources (MW), solid-state pulsed power sources, novel accelerators and so on [3], [4], [5], [6], [7], [8]. PCSS is a two-electrode device with a bulky semiconductor substrate and the characteristics of device are mainly depend on the material characteristics.…”

Section: Introductionmentioning

confidence: 99%

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Zeng,

Wang,

Niu

et al. 2024

IEEE J. Electron Devices Soc.

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Vertical extrinsic photoconductive semiconductor switches (PCSSs) are presented with initial characteristics comparison between V-doped 4H-SiC and Fe-doped GaN PCSS under axial triggering such as dark resistance, photoconductivity, power output, and breakdown behavior. Experiments are carried out under the 532-nm-wavelength laser with mJ-level energy and a pulse width of 30 ns. Photoconductive experiments show that the photoelectric conversion efficiency of GaN PCSS is 2.27 times higher than 4H-SiC PCSS with the same electric field strength under different laser energies from 1 mJ to 5 mJ. 4H-SiC PCSS with a dark-state resistance of 10 12 Ω • cm can withstand a bias voltage of 8 kV (16 kV/mm) and laser energy of 8 mJ and the maximum output power is up to 428.7 kW, while that of GaN can only stand a bias voltage of 1 kV (2.9 kV/mm) because of low dark resistance and defect. Obvious cracks of 4H-SiC PCSS can be observed from the breakdown image after breakdown occurs, while the dark-state resistance of GaN PCSS drops from 10 6 Ω•cm to 10 4 Ω•cm under high DC voltage.

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Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Cited by 17 publications

References 141 publications

Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers

Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

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