2013
DOI: 10.21236/ada596658
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Hybrid Josephson-CMOS Random Access Memory with Interfacing to Josephson Digital Circuits

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Cited by 2 publications
(4 citation statements)
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“…To facilitate high integration density, hybrid devices have been devised that combine SFQ circuits and complementary metal-oxide-semiconductor (CMOS) circuits [7,8]. These hybrid devices have the advantages of both SFQ circuits and CMOS circuits, such as high integration density and compatibility with conventional technologies and devices.…”
Section: Introductionmentioning
confidence: 99%
“…To facilitate high integration density, hybrid devices have been devised that combine SFQ circuits and complementary metal-oxide-semiconductor (CMOS) circuits [7,8]. These hybrid devices have the advantages of both SFQ circuits and CMOS circuits, such as high integration density and compatibility with conventional technologies and devices.…”
Section: Introductionmentioning
confidence: 99%
“…However, design of superconducting random access memory (RAM) that can store and recall data as efficiently as logic operations take place is still a largely unsolved problem [3]. Proposed solutions to this problem include magnetic RAM designs involving using magnetic Josephson junctions [4][5][6], hybrid superconducting-CMOS designs [7,8], and others [9]. The key challenges associated with developing a functional RAM are reducing power dissipation, increasing memory read/ write speed, and reducing chip size [3,9,10].…”
Section: Introductionmentioning
confidence: 99%
“…A RAM based on a modified unipolar vortextransitional cell has since been proposed, however this has not been implemented [15]. Hybrid superconducting-CMOS designs interface between the SFQ circuitry and room-temperature CMOS circuitry [7,8]. However, this approach introduces a significant amount of latency for memory access [8].…”
Section: Introductionmentioning
confidence: 99%
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