Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

Silva, Wilson J. da; Hümmelgen, Ivo A.; Mello, Rosâne; Ma, Dongge

doi:10.1063/1.2967731

Cited by 24 publications

(13 citation statements)

References 26 publications

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“…2,6 Following the backside contact evaporation, a 220 nm thick SPAN layer was deposited onto the SiC epitaxial layer at a rate of 1.8 nm/h by adopting a procedure based on the process first developed by Yang et al 27 and described in Ref. 6, except that the metanilic acid and aniline amounts (1.715 g and 455 ll, respectively) and the growth temperature (10 C) are different. Finally, a circular gate contact (with area A ¼ 0.0020 cm 2 and thickness 180 nm) was obtained by thermal evaporation of 99.99% Au on the SPAN film.…”

Section: A Device Fabricationmentioning

confidence: 99%

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Felix

Aziz

Cunha

et al. 2012

Journal of Applied Physics

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The current-voltage (I–V) characteristics of Au/sulfonated polyaniline (SPAN)/n-SiC heterojunctions have been investigated in detail over a wide range of temperatures between 20 and 440 K. The measured I–V characteristics of all devices show a good rectification behavior at all temperatures. The room temperature rectification ratios (forward to reverse currents ratio, IF/IR) at 0.6 V for SPAN/n-type 4H-SiC and SPAN/n-type 6H-SiC heterojunctions are 2 × 104 and 7 × 106, respectively. The value of rectification of SPAN/6H-SiC heterojunction is four orders of magnitutude higher than the state-of-the art sulfonated polyaniline thin films deposited on n-type silicon substrates. A self-assembly technique and copolymerization were used to fabricate a self-doped polyaniline films on SiC substrates. The experimental I–V data were analysed using the Werner model, which includes the series resistance of the heterojunctions. The diode parameters such as the ideality factor and the barrier height are determined from the experimental data using I–V analysis method. The effect of the temperature on these parameters is presented. Deep level transient spectroscopy (DLTS) and Laplace DLTS techniques were used to investigate the electrically active defects present in these heterostructure devices.

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Section: A Device Fabricationmentioning

confidence: 99%

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Felix

Aziz

Cunha

et al. 2012

Journal of Applied Physics

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“…Subsequent to the backside electrical deposition, a 200 nm thick SPAN thin film was deposited onto the (100), (311)A and (311)B GaAs epitaxial layer at a rate of 1.8 nm/h by adopting a procedure based on the process initially developed by Yang et al [32] and described in Ref. [13], except that the aniline and metanilic acid amounts (455 μl and 1.715 g, respectively) and the growth temperature …”

Section: Devices Fabricationmentioning

confidence: 99%

“…For this, after the cleaning process of substrates, a backside electrical contact of nickel (Ni)-gold (Au) was deposited by thermal evaporation using a BOC Edwards 306 system. For more details see procedure described elsewhere [13,33]. Subsequent to the backside electrical deposition, a 200 nm thick SPAN thin film was deposited onto the (100), (311) …”

Section: Devices Fabricationmentioning

confidence: 99%

“…Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8], battery electrodes [9,10], photodiodes [11], energy storage [12], transistors [13], gas sensors [14], biosensors [15], radiation sensors [16], anti-corrosive coatings [17,18] and electromagnetic interference shielding [19].…”

Section: Introductionmentioning

confidence: 99%

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Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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This article reports the effect of n-type GaAs substrate orientation, namely (100), IntroductionEssentially conducting polymers, such as polyaniline (PANI), sulfonated polyaniline (SPAN), poly(p-phenylene-vinylene), polypyrrole, polyacetylene, polythiophene, etc., are promising semiconductors materials with confirmed technological potential due to their unique optical and electrical properties [1]. Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8] As it is well known, the crystallographic orientation of the substrate has a significant effect on incorporation of impurities and defects and consequently on optical and electronic properties of III-V materials [28]. The ideality factor n and barrier height (BH) as well as the electrical characteristics are fundamental parameters of a Schottky barrier diode (SBD) and these give an indication about the quality of the Schottky interface. The SBD parameters must be determined over a broad range of temperatures because the analysis of the current-voltage (I-V) characteristics of the SBD measured only at room temperature does not provide accurate information about the conduction mechanism and the barrier nature created at metal semiconductor interface in order to understand these phenomena and determine precisely the parameters of the Schottky diodes. Chand et al. [29] and Hardikar et al.[30] analysed the experimental currentvoltage data which revealed that there is an increase in the ideality factor and a decrease in the zero-bias barrier height with decreasing temperature. Consequently, the ideality factor and the barrier height established from forward I-V characteristics are found to be temperature dependent. This confirms that the Schottky barrier height is inhomogeneous in nature at the interface. This behaviour has been successfully described on the basis of the thermionic emission mechanism with Gaussian distribution of the barrier heightTo fabricate a hybrid organic/inorganic semiconductor heterojunction device with the aim to obtain specific optical and electrical properties on the bases of their doping levels, a thin organic film is deposited onto the surface of a conventional inorganic semiconductor substrate. This can be done by simple and inexpensive methods such as 4 spin coating used for thin film deposition at room temperature. Recently, a new technique of SPAN films preparation has been developed by Yang et al. [32].In this paper, we report on the fabrication and electrical characterization of Au/SPAN/GaAs heterojunctions grown on three different substrate orientations, namely n-type GaAs (100), (311)A and (311)B. We have investigated the effect of the substrate orientation on the heterojunction parameters ...

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“…The plate (item E) fits into its support (item D), as shown in figure 1, and is made of Polymethyl Methacrylate (PMMA), which has a refractive index of 1.49624 for the wavelength of 505nm [15], [16]. The plate is composed of three parts: waveguide, detection spot, and mechanical alignment locks.…”

Section: Methodsmentioning

confidence: 99%

Fluorescence-based Lab-on-Chip spot design for improved signal detection

Bassani

Dias

Branco

et al. 2012

2012 Annual International Conference of the IEEE Engineering in Medicine and Biology Society

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This work presents a new perspective for fluorescence signal detection using specific optics on Lab-on-Chip devices. An apparatus was designed and implemented in order to assess the performance of a fluorescence technique using different detection spot configurations, using the chip itself as a waveguide for illumination. The experiments conducted investigate the influence of the dimensions - diameter and height - of the spot on the amplitude of the detection output signal. Results show that the configuration of optical interfaces must be considered in order to improve detection output, or to be able to detect less fluorophore molecules in the spot.

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Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

Cited by 24 publications

References 26 publications

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Fluorescence-based Lab-on-Chip spot design for improved signal detection

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