Hybrid silicon evanescent devices

Fang, Alexander W.; Park, Hyundai; Kuo, Ying-Hao; Jones, Richard E.; Cohen, Oded; Liang, Di; Raday, Omri; Sysak, M.N.; Paniccia, Mario; Bowers, John E.

doi:10.1016/s1369-7021(07)70177-3

Cited by 142 publications

(86 citation statements)

References 11 publications

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“…The first of these themes is hydrophilic bonding via O 2 plasmaassisted or SiO 2 covalent direct bonding. The second utilizes polymer to adhere silicon and III-V wafers together, and the final theme in photonic/microelectronic integration encompasses multiple bonding methods in hybrid processing techniques [3,4].…”

Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

Electrospinning for nano- to mesoscale photonic structures

et al. 2016

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Abstract:The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of microand nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/ devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and postprocessing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.

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Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

Electrospinning for nano- to mesoscale photonic structures

et al. 2016

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“…Electrical injection lasers [6,[8][9][10], amplifiers [11,12], photodetectors [13] and modulators [14][15][16] have been realized on silicon using this approach. More detailed reviews about this platform can be found in [17,18].…”

Section: Introductionmentioning

confidence: 99%

Hybrid silicon evanescent approach to optical interconnects

et al. 2009

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We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III-V materials and silicon-oninsulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, MachZehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III-V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM re-

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“…Two of the significant accomplishments in that respect include the demonstration of a continuous-wave Raman Si laser 2,3 and a hybrid silicon laser. 4 However both of these are based on indirect approaches that involve certain limitations. The direct approach of obtaining an electrically pumped fully Si based gain element has yet to be realized.…”

Section: Introductionmentioning

confidence: 99%

Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes

Karim

Hansson

2008

Journal of Applied Physics

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Erbium ͑Er͒ codoping with oxygen ͑O͒ in Si is a well-known method for producing electroluminescent material radiating at 1.54 m through a 4f shell transition of Er 3+ ions. In this work the influence of exposure to 980 nm radiation on the electroluminescence ͑EL͒ of reverse biased Si:Er/O light-emitting diodes ͑LEDs͒, which give a strong room temperature 1.54 m intensity, is presented and discussed. All the device layers, including Er/O doped Si sandwiched between two Si 0.82 Ge 0.18 layers, have been grown on silicon on insulator substrates using molecular beam epitaxy and processed to fabricate edge emitting Si:Er/O waveguide LEDs. Electromagnetic mode confinement simulations have been performed to optimize the layer parameters for waveguiding. The temperature dependence of the 1.54 m EL intensity exhibits an abnormal temperature quenching with a peak near −30°C, and at −160°C it has decreased by a factor of 5. However, irradiating the devices with a 980 nm laser gives an enhancement of the 1.54 m EL intensity, which is more dramatic at low temperatures ͑e.g., −200°C͒ where the quenched EL signal is increased up to almost the same level as at room temperature. The enhancement of the EL intensity is attributed to the photocurrent generated by the 980 nm laser, reducing the detrimental avalanche current.

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Hybrid silicon evanescent devices

Cited by 142 publications

References 11 publications

Electrospinning for nano- to mesoscale photonic structures

Electrospinning for nano- to mesoscale photonic structures

Hybrid silicon evanescent approach to optical interconnects

Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes

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