No abstract

We report an electrically pumped distributed feedback silicon evanescent laser. The laser operates continuous wave with a single mode output at 1600 nm. The laser threshold is 25 mA with a maximum output power of 5.4 mW at 10 degrees C. The maximum operating temperature and minimum line width of the laser are 50 degrees C, and 3.6 MHz, respectively.

Efficient wavelength conversion via four-wave-mixing in silicon-on-isolator p-i-n waveguides has been realized. By reverse biasing the p-i-n diode structure formed along the silicon rib waveguide, the nonlinear absorption due to two photon absorption induced free carrier absorption is significantly reduced, and a wavelength conversion efficiency of -8.5 dB has been achieved in an 8 cm long waveguide at a pump intensity of 40 MW/cm2. A high-speed pseudo-random bit sequence data at 10 Gb/s rate is converted to a new wavelength channel in the C-band with clear open eye diagram and no waveform distortion. Conversion efficiency as functions of pump power, wavelength detuning, and bias voltages, have been investigated. For shorter waveguides of 1.6 cm long, a conversion bandwidth of > 30 nm was achieved.

No abstract

Abstract:We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 µm) and small electrical and optical losses result in lasing threshold as low as 5.4 mA and up to 65 °C operation temperature in continuous-wave (cw) mode. The spectrum is single mode with large extinction ratio and small linewidth observed. Application as on-chip optical interconnects is discussed from a system perspective. ©2009 Optical Society of America