Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

Mastro, M. A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Ren, F.; Baik, Kwang Hyeon; Pearton, S. J.

doi:10.1016/s0038-1101(02)00473-2

Cited by 25 publications

(12 citation statements)

References 23 publications

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“…HVPE method has performed an important role to provide III-nitride substrates because of its high growth rate [8,9]. The HVPE growth technique can be also used to obtain thick and high-purity bulk nitride layers.…”

Section: Introductionmentioning

confidence: 99%

Growth and doping of AlGaN and electroluminescence of SAG‐InGaN/AlGaN heterostructure by mixed‐source HVPE

Kim

Ahn

Yang

et al. 2006

Phys. Status Solidi (c)

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The AlxGa1–xN layers on GaN/Al2O3 substrates are grown by mixed‐source hydride vapor phase epitaxy (HVPE) at various temperatures of the source zone. We find source zone temperature dependence of the composition x of AlxGa1–xN layers. Te doping as a new attempt and Si doping in obtaining an n‐type AlGaN layers are performed by putting small amount of Te (or Si) into the Ga‐Al source, respectively. In case of Te‐doped AlGaN (x = 0.16), the carrier concentration is varied from 1.1 x 1018 to 8.0 x 1018/cm3, while in case of Si‐doped one, it is varied from 2.0 x 1016 to 1.1 x 1017/cm3. We find the new results that Te doping is more suitable to get a high n‐type concentration by mixed‐source HVPE. InGaN/GaN multiple quantum wells (MQWs) are grown on the selective area growth (SAG)‐Te‐doped AlGaN and SAG‐Si‐doped AlGaN cladding layer by mealorganic chemical vapour deposition (MOCVD), respectively. Furthermore, we investigate the electroluminescence (EL) properties of SAG‐LEDs of two different cladding layers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Growth and doping of AlGaN and electroluminescence of SAG‐InGaN/AlGaN heterostructure by mixed‐source HVPE

Kim

Ahn

Yang

et al. 2006

Phys. Status Solidi (c)

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“…An emerging number of electronic and optoelectronic devices such as field-effect transistors (FETs), high electron mobility transistors (HEMTs), UV detectors, and UV emitters are based on AlN/AlGaN or AlGaN/GaN heterostructures [1][2][3]. Such devices could be greatly enhanced by the use of substrates made of single-crystalline aluminum nitride (AlN) because of its high thermal conductivity [4] and low mismatch to high-Al-content nitride layers.…”

Section: Introductionmentioning

confidence: 99%

Structural properties of AlN crystals grown by physical vapor transport

Bickermann

Epelbaum

Winnacker

2005

phys. stat. sol. (c)

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Structural properties of different AlN material grown by physical vapor transport (freestanding single crystals vs. bulky material) are compared. In polycrystalline samples, void formation leading to dark and opaque crystallites and grain boundaries is restricted to high growth temperatures and to grains grown with N-polarity. Single-crystalline freestanding AlN exhibits a zonal structure as growth takes place on multiple faces simultaneously. As a conclusion, optical transmission of different grains varies regardless of void formation: Grains grown with N-polarity appear darker and more opaque than grains grown in other directions. Presumably, impurity incorporation and/or intrinsic defect formation depends on the crystallographic orientation of the facet where growth occurs.

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“…There have been several reports on growth techniques, including MOVPE [8][9][10][11][12] and HVPE [13,14], in order to find a successful growth process for AlGaN layers. HVPE growth method is necessary to obtain thick and high-purity bulk substrates.…”

Section: Introductionmentioning

confidence: 99%

Growth of thick AlGaN by metalorganic‐hydride vapor phase epitaxy

Kim

Lee

et al. 2004

phys. stat. sol. (c)

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The growth of a thick AlGaN is performed on Al 2 O 3 substrate by metalorganic vapor phase epitaxyhydride vapor phase epitaxy (MOVPE-HVPE) combined system. Thin AlN or GaN layer is grown on a substrate by MOVPE growth method with the conventional manner but in a hot-wall chamber and followed by the HVPE growth of a thick AlGaN in the same chamber. For the growth of a AlGaN layer, NH 3 and aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al are used as aluminum-gallium and nitrogen sources. The peak of the cathodoluminescence (CL) spectrum of the thick AlGaN is shown at the wavelength of 354 nm. This suggests that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN.

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Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

Cited by 25 publications

References 23 publications

Growth and doping of AlGaN and electroluminescence of SAG‐InGaN/AlGaN heterostructure by mixed‐source HVPE

Growth and doping of AlGaN and electroluminescence of SAG‐InGaN/AlGaN heterostructure by mixed‐source HVPE

Structural properties of AlN crystals grown by physical vapor transport

Growth of thick AlGaN by metalorganic‐hydride vapor phase epitaxy

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